SCHEMBL4806782

SCHEMBL4806782

CCCCCCCCCCCCCC[Si](C)(OC)OC

nearest known ligand 0.42

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
TSHR P16473 4/20 0.42
THRB P10828 1/20 0.42
LMNA P02545 3/20 0.42
EPHX1 P07099 1/20 0.37
DNM1 Q05193 6/20 0.33
ALDH1A1 P00352 3/20 0.33
MEN1 O00255 2/20 0.33
KMT2A Q03164 2/20 0.33
HSD17B10 Q99714 1/20 0.33
SLC22A1 O15245 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6325257 1.00 TSHR (0.42) TSHRTHRBLMNAEPHX1DNM1
SCHEMBL995736 1.00 TSHR (0.42) TSHRTHRBLMNAEPHX1DNM1
SCHEMBL114102 1.00 TSHR (0.42) TSHRTHRBLMNAEPHX1DNM1
SCHEMBL114288 1.00 TSHR (0.42) TSHRTHRBLMNAEPHX1DNM1
SCHEMBL16834820 1.00 TSHR (0.42) TSHRTHRBLMNAEPHX1DNM1
SCHEMBL143380 1.00 TSHR (0.42) TSHRTHRBLMNAEPHX1DNM1
SCHEMBL5841839 1.00 TSHR (0.42) TSHRTHRBLMNAEPHX1DNM1
SCHEMBL5843416 1.00 TSHR (0.42) TSHRTHRBLMNAEPHX1DNM1
SCHEMBL114514 1.00 TSHR (0.42) TSHRTHRBLMNAEPHX1DNM1
SCHEMBL1584714 1.00 TSHR (0.42) TSHRTHRBLMNAEPHX1DNM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116217938-A Long-chain alkyl fluorine-containing vinyl silicone oil and preparation method thereof 浙江润禾有机硅新材料有限公司 2023-06-06 CN claimed
CN-111430783-B Lithium ion battery diaphragm 衡阳力赛储能有限公司 2021-11-16 CN claimed
CN-111430784-B Lithium ion battery diaphragm with excellent comprehensive performance 泰州衡川新能源材料科技有限公司 2021-08-20 CN claimed
CN-111554853-A Preparation method of silicon dioxide aerogel modified lithium ion battery diaphragm 林树琦 2020-08-18 CN claimed
CN-111430784-A Lithium ion battery diaphragm with excellent comprehensive performance 曹亚琼 2020-07-17 CN claimed
CN-111430783-A Lithium ion battery diaphragm 曹亚琼 2020-07-17 CN claimed
CN-104130415-A Organosilicon quaternary ammonium salt containing alkyl group and glycosylamide group, and preparation method thereof UNIV BEIJING TECH & BUSINESS 2014-11-05 CN claimed
CN-102492146-B Method for preparing polysiloxane containing alkyl and glucosamide UNIV BEIJING TECH & BUSINESS 2013-06-12 CN claimed
CN-102492146-A Method for preparing polysiloxane containing alkyl and glucosamide UNIV BEIJING TECH & BUSINESS 2012-06-13 CN claimed
US-12331163-B2 Method for preparing polyorganosiloxanes WACKER CHEMIE AG (DE) 2025-06-17 US disclosed
CN-116217938-A Long-chain alkyl fluorine-containing vinyl silicone oil and preparation method thereof 浙江润禾有机硅新材料有限公司 2023-06-06 CN disclosed
US-20220227944-A1 A METHOD FOR PREPARING POLYORGANOSILOXANES WACKER CHEMIE AG (DE) 2022-07-21 US disclosed
EP-3966270-A1 A METHOD FOR PREPARING POLYORGANOSILOXANES Wacker Chemie AG (DE) 2022-03-16 EP disclosed
CN-113785004-A Process for preparing polyorganosiloxanes 瓦克化学股份公司 2021-12-10 CN disclosed
CN-103154093-A Saccharide siloxane copolymers and methods for their preparation and use DOW CORNING 2013-06-12 CN disclosed
CN-102492146-B Method for preparing polysiloxane containing alkyl and glucosamide UNIV BEIJING TECH & BUSINESS 2013-06-12 CN disclosed
CN-102492146-A Method for preparing polysiloxane containing alkyl and glucosamide UNIV BEIJING TECH & BUSINESS 2012-06-13 CN disclosed
US-7341775-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO. LTD. (JP) 2008-03-11 US disclosed
EP-1580804-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILMS, PROCESS FOR PRODUCTION OF THE FILMS, INTERLAYER DIELECTRICS, AND SEMICONDUCTOR DEVICES MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-28 EP disclosed
US-20040235971-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-25 US disclosed