SCHEMBL4807486

SCHEMBL4807486

O[Si](O)(O)Oc1ccccc1.[KH]

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 4/20 0.43
TSHR P16473 1/20 0.43
CA5A P35218 1/20 0.40
CA5B Q9Y2D0 1/20 0.40
CA4 P22748 1/20 0.39
NR1H2 P55055 1/20 0.39
BAX Q07812 1/20 0.39
ALDH1A1 P00352 1/20 0.37
RECQL P46063 1/20 0.37
SRC P12931 1/20 0.37
KCNA3 P22001 1/20 0.36
ALOX15 P16050 1/20 0.36
CA1 P00915 1/20 0.34
CA2 P00918 1/20 0.34
KMT2A Q03164 2/20 0.33
MEN1 O00255 1/20 0.33
KCNH2 Q12809 1/20 0.33
LMNA P02545 1/20 0.33
KDM4E B2RXH2 1/20 0.33
GLA P06280 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL230789 0.97 LTA4H (0.45) LTA4HTSHRCA5ACA5BCA4
Rubidium SCHEMBL4809362 0.94 LTA4H (0.43) LTA4HTSHRCA5ACA5BCA4
SCHEMBL4809213 0.94 LTA4H (0.43) LTA4HTSHRCA5ACA5BCA4
SCHEMBL4813685 0.94 LTA4H (0.43) LTA4HTSHRCA5ACA5BCA4
SCHEMBL4809947 0.94 LTA4H (0.43) LTA4HTSHRCA5ACA5BCA4
Tetramethylammonium Ion SCHEMBL27606119 0.87 CA4 (0.40) LTA4HTSHRCA5ACA5BCA4
SCHEMBL896125 0.80 LTA4H (0.45) LTA4HTSHRCA5ACA5BCA4
SCHEMBL1217901 0.80 LTA4H (0.45) LTA4HTSHRCA5ACA5BCA4
Fluoride SCHEMBL27845931 0.78 LTA4H (0.43) LTA4HTSHRCA5ACA5BCA4
Triphosphate SCHEMBL28546306 0.77 SRC (0.48) TSHRCA5ACA4ALDH1A1SRC

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118685158-A High-temperature high-density silicate water-based drilling fluid 新疆贝肯能源工程股份有限公司 2024-09-24 CN claimed
CN-118685158-B High-temperature high-density silicate water-based drilling fluid 贝肯能源控股集团股份有限公司 2025-01-28 CN disclosed
CN-118685158-A High-temperature high-density silicate water-based drilling fluid 新疆贝肯能源工程股份有限公司 2024-09-24 CN disclosed
US-7332446-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-02-19 US disclosed
CN-1542071-A Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device ��Խ��ѧ��ҵ��ʽ���� 2004-11-03 CN disclosed
US-20040188809-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-30 US disclosed