SCHEMBL4808203

SCHEMBL4808203

COCCO[SiH](CCCOCC1CO1)C(C)C

nearest known ligand 0.49

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.49
SMN1; SMN2 Q16637 1/20 0.47
ALDH1A1 P00352 3/20 0.45
TDP1 Q9NUW8 1/20 0.45
MAPK1 P28482 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4808348 0.85 TSHR (0.45) TSHRSMN1; SMN2ALDH1A1TDP1MAPK1
SCHEMBL4810526 0.84 TSHR (0.41) TSHRSMN1; SMN2ALDH1A1TDP1
SCHEMBL17530156 0.81 TSHR (0.47) TSHRSMN1; SMN2ALDH1A1TDP1MAPK1
SCHEMBL7118404 0.80 TSHR (0.53) TSHRSMN1; SMN2ALDH1A1TDP1MAPK1
SCHEMBL17530119 0.79 TSHR (0.45) TSHRSMN1; SMN2ALDH1A1TDP1MAPK1
SCHEMBL4807947 0.79 TSHR (0.41) TSHRSMN1; SMN2ALDH1A1TDP1
SCHEMBL4808509 0.74 TSHR (0.58) TSHRSMN1; SMN2ALDH1A1TDP1MAPK1
SCHEMBL14492235 0.73 TSHR (0.75) TSHRSMN1; SMN2ALDH1A1TDP1MAPK1
SCHEMBL16613165 0.73 TSHR (0.57) TSHRSMN1; SMN2ALDH1A1TDP1MAPK1
SCHEMBL4808081 0.73 TSHR (0.62) TSHRSMN1; SMN2ALDH1A1TDP1MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2022264906-A1 PRIMER COMPOSITION FOR INORGANIC OXIDE VAPOR DEPOSITION, CURED PRODUCT AND MULTILAYER BODY DIC株式会社 2022-12-22 WO disclosed
EP-3213915-B1 LAMINATE DAINIPPON INK & CHEMICALS (JP) 2019-08-14 EP disclosed
US-20170253965-A1 LAMINATE DIC CORPORATION (JP) 2017-09-07 US disclosed
EP-3213915-A1 LAMINATE DIC Corporation (JP) 2017-09-06 EP disclosed
US-20140061970-A1 NANOIMPRINT CURABLE COMPOSITION, NANOIMPRINT-LITHOGRAPHIC MOLDED PRODUCT, AND METHOD FOR FORMING PATTERN DIC CORPORATION (JP) 2014-03-06 US disclosed
US-7435668-B2 Method for doping impurities, and for producing a semiconductor device and applied electronic apparatus using a solution containing impurity ions SONY CORPORATION (JP) 2008-10-14 US disclosed
US-7335539-B2 Method for making thin-film semiconductor device SONY CORPORATION (JP) 2008-02-26 US disclosed
US-20070298550-A1 Method for making thin-film semiconductor device SONY CORPORATION (JP) 2007-12-27 US disclosed
US-7273774-B2 Method for making thin-film semiconductor device SONY CORPORATION (JP) 2007-09-25 US disclosed
US-20060079033-A1 Method for making thin-film semiconductor device SONY CORPORATION (JP) 2006-04-13 US disclosed
US-20050181566-A1 Method for doping impurities, methods for producing semiconductor device and applied electronic apparatus SONY CORPORATION (JP) 2005-08-18 US disclosed