SCHEMBL4809232

SCHEMBL4809232

O=CCCC(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.32

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
HIF1A Q16665 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1576752 0.92 HIF1A (0.30) HIF1A
SCHEMBL19699318 0.90 THRB (0.31)
SCHEMBL3175644 0.90 THRB (0.31)
SCHEMBL28874091 0.89 HIF1A (0.35) HIF1A
SCHEMBL21633523 0.86 HIF1A (0.33) HIF1A
SCHEMBL14732697 0.86 HIF1A (0.33) HIF1A
SCHEMBL1576554 0.83 HIF1A (0.35) HIF1A
SCHEMBL27429947 0.77 HIF1A (0.38) HIF1A
SCHEMBL14732716 0.77
SCHEMBL17727987 0.74

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2602660-B1 Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film SHINETSU CHEMICAL CO (JP) 2019-03-20 EP disclosed
US-9158191-B2 Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-10-13 US disclosed
US-20130149493-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, MAKING METHOD, PATTERN FORMING PROCESS, AND ELECTRIC/ELECTRONIC PART PROTECTING FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-06-13 US disclosed
EP-2602660-A1 Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film Shin-Etsu Chemical Co., Ltd. (JP) 2013-06-12 EP disclosed
US-7468236-B2 Amine compound, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-23 US disclosed
US-20070087287-A1 Amine compound, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-04-19 US disclosed