SCHEMBL4811090

SCHEMBL4811090

CN(CCN1CCOCC1)C(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)F

nearest known ligand 0.39

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
TACR1 P25103 2/20 0.39
TACR3 P29371 2/20 0.39
POLB P06746 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
ALDH1A1 P00352 2/20 0.34
GLA P06280 1/20 0.33
MEN1 O00255 3/20 0.32
KMT2A Q03164 3/20 0.32
SCN9A Q15858 1/20 0.32
TSHR P16473 1/20 0.32
CASR P41180 1/20 0.32
PKM P14618 1/20 0.31
LMNA P02545 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13985633 0.84 TACR1 (0.40) TACR1TACR3POLBSMN1; SMN2ALDH1A1
SCHEMBL13985672 0.82 TACR1 (0.42) TACR1TACR3POLBSMN1; SMN2ALDH1A1
SCHEMBL13985636 0.82 TACR1 (0.41) TACR1TACR3POLBSMN1; SMN2ALDH1A1
SCHEMBL15014707 0.79 SMN1; SMN2 (0.46) TACR1TACR3POLBSMN1; SMN2ALDH1A1
SCHEMBL259375 0.79 CHRM2 (0.43) TACR1TACR3POLBSMN1; SMN2ALDH1A1
SCHEMBL15025059 0.78 TACR1 (0.42) TACR1TACR3POLBSMN1; SMN2ALDH1A1
SCHEMBL15025379 0.76 POLB (0.39) TACR1TACR3POLBSMN1; SMN2ALDH1A1
SCHEMBL13980424 0.75 SMN1; SMN2 (0.43) TACR1TACR3POLBSMN1; SMN2ALDH1A1
SCHEMBL19986235 0.74 SMN1; SMN2 (0.47) TACR1TACR3POLBSMN1; SMN2ALDH1A1
SCHEMBL15025227 0.74 TACR1 (0.42) TACR1TACR3POLBSMN1; SMN2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2602660-B1 Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film SHINETSU CHEMICAL CO (JP) 2019-03-20 EP disclosed
US-9158191-B2 Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-10-13 US disclosed
US-20130149493-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, MAKING METHOD, PATTERN FORMING PROCESS, AND ELECTRIC/ELECTRONIC PART PROTECTING FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-06-13 US disclosed
EP-2602660-A1 Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film Shin-Etsu Chemical Co., Ltd. (JP) 2013-06-12 EP disclosed
EP-2602660-A1 Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film Shin-Etsu Chemical Co., Ltd. (JP) 2013-06-12 EP disclosed
US-7468236-B2 Amine compound, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-23 US disclosed
US-20070087287-A1 Amine compound, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-04-19 US disclosed