Rubidium

Rubidium

SCHEMBL4811660

CCCCO[Si](O)(O)O.[Rb]

nearest known ligand 0.40

Full drug profile on Sugi Atlas →

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 4/20 0.40
ADRB2 P07550 1/20 0.39
ADRB1 P08588 1/20 0.39
ADRB3 P13945 1/20 0.39
ALDH1A1 P00352 2/20 0.39
ATM Q13315 1/20 0.36
CYP3A4 P08684 2/20 0.35
HPGD P15428 1/20 0.33
CA1 P00915 2/20 0.32
CA2 P00918 2/20 0.32
LMNA P02545 1/20 0.32
LTA4H P09960 1/20 0.31
HCAR2 Q8TDS4 1/20 0.31
NR5A1 Q13285 1/20 0.31
MEN1 O00255 1/20 0.31
THRB P10828 1/20 0.31
HTT P42858 1/20 0.31
KMT2A Q03164 1/20 0.31
CA12 O43570 1/20 0.31
CA9 Q16790 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL76347 0.97
SCHEMBL28470868 0.94 TSHR (0.40) TSHRADRB2ADRB1ADRB3ALDH1A1
SCHEMBL29286190 0.94 TSHR (0.40) TSHRADRB2ADRB1ADRB3ALDH1A1
SCHEMBL27916913 0.94 TSHR (0.40) TSHRADRB2ADRB1ADRB3ALDH1A1
SCHEMBL4812719 0.94 TSHR (0.40) TSHRADRB2ADRB1ADRB3ALDH1A1
SCHEMBL4810989 0.94 TSHR (0.40) TSHRADRB2ADRB1ADRB3ALDH1A1
SCHEMBL4808794 0.94 TSHR (0.40) TSHRADRB2ADRB1ADRB3ALDH1A1
SCHEMBL251655 0.94 TSHR (0.40) TSHRADRB2ADRB1ADRB3ALDH1A1
SCHEMBL10631648 0.92 TSHR (0.39) TSHRADRB2ADRB1ADRB3ALDH1A1
Alcohol SCHEMBL28323340 0.92 TSHR (0.44) TSHRADRB2ADRB1ADRB3ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7332446-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-02-19 US disclosed
US-20040188809-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-30 US disclosed