Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | DNM1 | Q05193 | 7/20 | 0.58 |
| ▸ | APAF1 | O14727 | 1/20 | 0.54 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.54 |
| ▸ | RAD52 | P43351 | 1/20 | 0.54 |
| ▸ | ENPP2 | Q13822 | 4/20 | 0.47 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.47 |
| ▸ | MEN1 | O00255 | 4/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.42 |
| ▸ | APEX1 | P27695 | 3/20 | 0.42 |
| ▸ | NFKB1 | P19838 | 2/20 | 0.42 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.42 |
| ▸ | ACHE | P22303 | 2/20 | 0.42 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.42 |
| ▸ | PMP22 | Q01453 | 2/20 | 0.42 |
| ▸ | LMNA | P02545 | 1/20 | 0.42 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.42 |
| ▸ | HRH3 | Q9Y5N1 | 1/20 | 0.42 |
| ▸ | TSHR | P16473 | 1/20 | 0.42 |
| ▸ | RAB9A | P51151 | 1/20 | 0.42 |
| ▸ | HTT | P42858 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL10660726 | 0.92 | DNM1 (0.44) | DNM1APAF1HSP90AA1RAD52ENPP2 | |
| Didecyldimethylammonium SCHEMBL15203614 | 0.89 | HTT (0.58) | DNM1HSP90AA1RAD52EPHX1KMT2A | |
| Trifluoromethanesulfonic Acid SCHEMBL1533994 | 0.89 | EPHX1 (0.47) | DNM1EPHX1HTTCES1 | |
| Trifluoromethanesulfonic Acid SCHEMBL17180002 | 0.89 | HTT (0.58) | DNM1HSP90AA1RAD52EPHX1KMT2A | |
| Trifluoromethanesulfonic Acid SCHEMBL17180015 | 0.89 | HTT (0.58) | DNM1HSP90AA1RAD52EPHX1KMT2A | |
| Trifluoromethanesulfonic Acid SCHEMBL2857301 | 0.88 | SLC22A1 (0.54) | DNM1EPHX1SMN1; SMN2HSD17B10TSHR | |
| Tetrahexylammonium SCHEMBL2862383 | 0.88 | SLC22A1 (0.54) | DNM1EPHX1SMN1; SMN2HSD17B10TSHR | |
| Trifluoromethanesulfonic Acid SCHEMBL302257 | 0.86 | SLC22A1 (0.52) | DNM1EPHX1SMN1; SMN2HSD17B10TSHR | |
| Tetrapentylammonium SCHEMBL2862365 | 0.86 | SLC22A1 (0.52) | DNM1EPHX1SMN1; SMN2HSD17B10TSHR | |
| Sulfuric Acid SCHEMBL9464362 | 0.86 | DNM1 (0.71) | DNM1APAF1HSP90AA1RAD52ENPP2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20140148537-A1 | ELASTIC POLYURETHANE THREAD AND MANUFACTURING METHOD THEREOF | TORAY OPELONTEX CO., LTD. (JP) | 2014-05-29 | — | — | US | disclosed |
| EP-2631338-A1 | ELASTIC POLYURETHANE THREAD AND MANUFACTURING METHOD THEREOF | Toray Opelontex Co., Ltd (JP) | 2013-08-28 | — | — | EP | disclosed |
| US-7341775-B2 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO. LTD. (JP) | 2008-03-11 | — | — | US | disclosed |
| US-20060289849-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. | 2006-12-28 | — | — | US | disclosed |
| US-7119354-B2 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-10-10 | — | — | US | disclosed |
| EP-1580804-A1 | COMPOSITION FOR POROUS FILM FORMATION, POROUS FILMS, PROCESS FOR PRODUCTION OF THE FILMS, INTERLAYER DIELECTRICS, AND SEMICONDUCTOR DEVICES | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-09-28 | — | — | EP | disclosed |
| US-20040235971-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-11-25 | — | — | US | disclosed |
| US-20040201007-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. | 2004-10-14 | — | — | US | disclosed |