SCHEMBL482394

SCHEMBL482394

C=C(C)C(=O)OCC=Cc1ccc(O)cc1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA12 O43570 7/20 0.46
CA7 P43166 7/20 0.46
CA9 Q16790 7/20 0.46
CA14 Q9ULX7 7/20 0.46
CA1 P00915 6/20 0.46
CA2 P00918 5/20 0.46
TYR P14679 3/20 0.42
AKR1B10 O60218 4/20 0.42
AKR1B1 P15121 4/20 0.42
MAOB P27338 2/20 0.42
PTGS2 P35354 1/20 0.42
GLO1 Q04760 1/20 0.42
CAMK2A Q9UQM7 1/20 0.42
ALDH1A1 P00352 4/20 0.41
MAPT P10636 2/20 0.41
SMN1; SMN2 Q16637 2/20 0.41
TDP1 Q9NUW8 2/20 0.41
RECQL P46063 1/20 0.41
MMP2 P08253 1/20 0.41
MMP9 P14780 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27713740 0.86 CACNA1B (0.46) MAOBPTGS2ALDH1A1MAPTSMN1; SMN2
SCHEMBL3468078 0.86 CACNA1B (0.50) ALDH1A1MAPTSMN1; SMN2TDP1RECQL
SCHEMBL75625 0.86 CACNA1B (0.50) ALDH1A1MAPTSMN1; SMN2TDP1RECQL
SCHEMBL75626 0.86 CACNA1B (0.50) ALDH1A1MAPTSMN1; SMN2TDP1RECQL
SCHEMBL8069940 0.85 CA12 (0.40) CA12CA7CA9CA14CA1
SCHEMBL28770857 0.85 GSK3B (0.50) ALDH1A1MAPTTDP1CYP2C9F3
SCHEMBL27733957 0.84 CACNA1B (0.38) ALDH1A1MAPTSMN1; SMN2TDP1RECQL
SCHEMBL7368086 0.83 CA12 (0.51) CA12CA7CA9CA14CA1
SCHEMBL7368082 0.83 CA12 (0.51) CA12CA7CA9CA14CA1
SCHEMBL7368088 0.83 CA12 (0.51) CA12CA7CA9CA14CA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 114 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2105794-B1 Novel photoacid generator, resist composition, and patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
EP-2000851-B1 Photomask blank, resist pattern forming process, and photomask preparation process SHINETSU CHEMICAL CO (JP) 2015-07-29 EP disclosed
EP-2033966-B1 Novel photoacid generators, resist compositons, and patterning processes SHINETSU CHEMICAL CO (JP) 2015-07-29 EP disclosed
EP-1099983-B1 Chemically amplified positive resist composition and patterning method SHINETSU CHEMICAL CO (JP) 2014-08-06 EP disclosed
US-8609889-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-12-17 US disclosed
US-8541158-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-09-24 US disclosed
EP-1710230-B1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2013-08-14 EP disclosed
US-8394570-B2 Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-12 US disclosed
US-8343694-B2 Photomask blank, resist pattern forming process, and photomask preparation process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-01 US disclosed
US-8268531-B2 Photoacid generator compounds and compositions CORNELL RESEARCH FOUNDATION, INC. (US) 2012-09-18 US disclosed
US-6156477-A Polymers and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-12-05 US disclosed
EP-0466359-B1 Process for making low optical density polymers and copolymers for photoresists and optical applications HOECHST CELANESE CORP (US) 2000-05-10 EP disclosed
EP-0978015-A1 LIGHT ABSORBING POLYMERS Clariant International Ltd. (CH) 2000-02-09 EP disclosed
US-5981145-A CONTAINING A COPOLYMER OF MODIFIED HYDROXYSTYRENE MONOMER AND AN ETHYLENICALLY UNSATURATED MONOMER FREE OF AROMATIC RING, SUITABLE FOR ANTIREFLECTIVE COATING CLARIANT FINANCE (BVI) LIMITED (VG) 1999-11-09 US disclosed
WO-1998049602-A1 LIGHT ABSORBING POLYMERS CLARIANT INTERNATIONAL, LTD. (CH) 1998-11-05 WO disclosed
US-5625007-A POLYHYDROXYSTYRENE POLYMERS FROM TRANSESTERIFICATION OF P-ACETOXYSTYRENE POLYMERS HOECHST CELANESE CORP. (US) 1997-04-29 US disclosed
US-5350660-A Chemical amplified resist material containing photosensitive compound capable of generating an acid and specific polystyrene copolymer having functional groups that become alkali-soluble under an acid atmosphere WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1994-09-27 US disclosed
US-5239015-A Polymerization of 4-acetoxystyrene in presence of alcohol; transesterification HOECHST CELANESE CORPORATION (US) 1993-08-24 US disclosed
EP-0466359-A2 Process for making low optical density polymers and copolymers for photoresists and optical applications HOECHST CELANESE CORPORATION (US) 1992-01-15 EP disclosed
EP-0440374-A2 Chemical amplified resist material WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1991-08-07 EP disclosed