SCHEMBL482416

SCHEMBL482416

O=C(C[S+]1CCCC1)c1ccccc1.O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA2 P00918 7/20 0.35
CA1 P00915 6/20 0.35
MMP1 P03956 5/20 0.35
MMP2 P08253 5/20 0.35
MMP9 P14780 5/20 0.35
MMP8 P22894 5/20 0.35
MMP13 P45452 5/20 0.35
HSD11B1 P28845 2/20 0.33
RECQL P46063 1/20 0.32
PTPN1 P18031 2/20 0.32
ERCC5 P28715 1/20 0.32
FEN1 P39748 1/20 0.32
CES1 P23141 2/20 0.32
MAPK1 P28482 2/20 0.32
KMT2A Q03164 2/20 0.32
KDM4E B2RXH2 1/20 0.32
MEN1 O00255 1/20 0.32
CYP3A4 P08684 1/20 0.32
MAPT P10636 1/20 0.32
HPGD P15428 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4191335 0.99 CA2 (0.34) CA2CA1MMP1MMP2MMP9
SCHEMBL4992645 0.91 PTPN1 (0.36) CA2CA1HSD11B1RECQLPTPN1
Trifluoromethanesulfonic Acid SCHEMBL3096657 0.87 MAPT (0.37) CA2CA1HSD11B1RECQLPTPN1
SCHEMBL6856441 0.87 PTPN1 (0.39) CA2CA1PTPN1CES1KDM4E
SCHEMBL6864543 0.86 PTPN1 (0.38) CA2CA1PTPN1CES1KDM4E
SCHEMBL3877031 0.82 PTPN1 (0.39) PTPN1MAPK1KMT2AKDM4EMEN1
SCHEMBL3879944 0.81 PTPN1 (0.38) PTPN1MAPK1KMT2AKDM4EMEN1
SCHEMBL2923123 0.80 CA2 (0.37) CA2CA1MMP1MMP2MMP9
SCHEMBL3834477 0.80 CA1 (0.38) CA2CA1MMP1MMP2MMP9
SCHEMBL2945652 0.79 CA2 (0.39) CA2CA1MMP1MMP2MMP9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 94 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2244124-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-26 EP disclosed
EP-2244126-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
EP-2000851-B1 Photomask blank, resist pattern forming process, and photomask preparation process SHINETSU CHEMICAL CO (JP) 2015-07-29 EP disclosed
EP-2146247-B1 Resist patterning process and manufacturing photo mask SHINETSU CHEMICAL CO (JP) 2015-04-15 EP disclosed
US-8968979-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-03 US disclosed
EP-2267533-B1 Resist composition SHINETSU CHEMICAL CO (JP) 2014-10-22 EP disclosed
EP-2244125-B1 Resist composition SHINETSU CHEMICAL CO (JP) 2014-10-08 EP disclosed
EP-2146245-B1 Resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2014-06-25 EP disclosed
US-8592133-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-11-26 US disclosed
US-8592129-B2 Resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-11-26 US disclosed
US-6858370-B2 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2005-02-22 US disclosed
US-20040229162-A1 Photoacid generators, chemically amplified resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-11-18 US disclosed
US-6818379-B2 SULFONIUM SALT REPRESENTED BY THE FOLLOWING FORMULA (I): WHEREIN Q1, Q2 AND Q3 EACH INDEPENDENTLY REPRESENT HYDROGEN, HYDROXY, ALKYL HAVING 1 TO 6 CARBON ATOMS, OR ALKOXY HAVING 1 TO 6 CARBON ATOMS, BUT ALL OF Q1, Q2 AND Q3 ARE NOT THE SAME; SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-11-16 US disclosed
US-20040224251-A1 Positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-11-11 US disclosed
US-6767686-B2 FOR USE IN LITHOGRAPHY SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-07-27 US disclosed
US-20040009429-A1 Positive-working photosensitive composition FUJI PHOTO FILM CO., LTD. 2004-01-15 US disclosed
US-20030148211-A1 Sulfonium salt and use thereof SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-08-07 US disclosed
US-20030017415-A1 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. 2003-01-23 US disclosed
US-20020146641-A1 Chemically amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-10-10 US disclosed
EP-1207423-A1 Chemically amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-05-22 EP disclosed