SCHEMBL4828508

SCHEMBL4828508

CC(C)S(=O)(=O)C=[N+]=[N-]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13836864 0.75
SCHEMBL6761679 0.71
SCHEMBL7691561 0.67
SCHEMBL28640924 0.65
SCHEMBL399399 0.63
SCHEMBL2189344 0.61
SCHEMBL410162 0.61
SCHEMBL18841288 0.59
SCHEMBL16481141 0.59
SCHEMBL24091416 0.57

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 194 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-100507716-C Chemical amplification type positive resist composition, resist laminated material, resist pattern forming method and method of manufacturing semiconductor device TOYKO OHKA KOGYO CO LTD (JP) 2009-07-01 CN claimed
CN-1311298-C Photoresist composition, laminated material, pattern forming method and method for manufacturing semiconductor device TOKYO OHKA KOGYO CO LTD (JP) 2007-04-18 CN claimed
CN-1740911-A Chemical amplification type positive resist composition, resist laminated material, resist pattern forming method and method of manufacturing semiconductor device TOYKO OHKA KOGYO CO LTD (JP) 2006-03-01 CN claimed
CN-1520534-A Photoresist composition, laminated material, pattern forming method and method for manufacturing semiconductor device ͬ�Ϳ�ҵ��ʽ���� 2004-08-11 CN claimed
US-20250216783-A1 ANTI-SPACER MASKING PROCESS USING SECOND SWITCHABLE POLYMER TOKYO ELECTRON LTD (JP) 2025-07-03 US disclosed
CN-104281006-B Radiation-ray sensitive composition 三菱瓦斯化学株式会社 2019-01-22 CN disclosed
CN-102902157-B Glass processing method 东京应化工业株式会社 2018-07-27 CN disclosed
CN-108008600-A Radiation-ray sensitive composition 三菱瓦斯化学株式会社 2018-05-08 CN disclosed
CN-107949808-A Lower layer film for lithography forms material, lower layer film for lithography is formed with composition, lower layer film for lithography and its manufacture method, pattern formation method, resin and purification process 三菱瓦斯化学株式会社 2018-04-20 CN disclosed
CN-107924123-A Photoetching material and its manufacture method, photoetching composition, pattern formation method and, compound, resin and their purification process 学校法人关西大学 2018-04-17 CN disclosed
CN-107924131-A Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, method for producing same, and method for forming resist pattern 三菱瓦斯化学株式会社 2018-04-17 CN disclosed
CN-104981463-B Compound, lower layer film for lithography form material, lower layer film for lithography and pattern formation method 三菱瓦斯化学株式会社 2018-04-13 CN disclosed
CN-1263611-A Method for forming pattern CLARIANT INT LTD (CH) 2000-08-16 CN disclosed
CN-1263612-A Chemically amplified resist composition CLARIANT INT LTD (CH) 2000-08-16 CN disclosed
CN-1239556-A Novel process for preparing resists CLARIANT INT LTD (CH) 1999-12-22 CN disclosed
CN-1229480-A Radiation-sensitive resist composition with high heat resistance CLARIANT INT LTD (CH) 1999-09-22 CN disclosed
CN-1191993-A Radiation sensitive composition adapted for roller coating CLARIANT INT LTD (CH) 1998-09-02 CN disclosed
CN-1191992-A Radiation-sensitive composition adapted for roller coating CLARIANT INT LTD (CH) 1998-09-02 CN disclosed
CN-1180849-A Radiation sensitve composition CLARIANT INT LTD (CH) 1998-05-06 CN disclosed
CN-1159459-A Polymer composition and resist meterial WAKO PURE CHEM IND LTD (JP) 1997-09-17 CN disclosed