⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5013176 | 0.87 | — | — | |
| SCHEMBL5013345 | 0.82 | — | — | |
| SCHEMBL7592458 | 0.82 | — | — | |
| SCHEMBL30642063 | 0.82 | — | — | |
| SCHEMBL6037221 | 0.82 | — | — | |
| SCHEMBL3841426 | 0.82 | — | — | |
| SCHEMBL491101 | 0.82 | — | — | |
| SCHEMBL2709871 | 0.67 | — | — | |
| Fluoride SCHEMBL10010956 | 0.67 | — | — | |
| SCHEMBL3188217 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 59 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-113437049-B | Hafnium-based ferroelectric memory and preparation method thereof | 复旦大学 | 2022-10-11 | — | — | CN | claimed |
| CN-111668023-B | Preparation method and application of hafnium-aluminum-oxygen film | 肇庆市华师大光电产业研究院 | 2021-10-08 | — | — | CN | claimed |
| CN-113437049-A | Hafnium-based ferroelectric memory and preparation method thereof | 复旦大学 | 2021-09-24 | — | — | CN | claimed |
| CN-111668023-A | Preparation method of hafnium-aluminum-oxygen thin film with excellent electrical property and application of hafnium-aluminum-oxygen thin film in preparation of radio frequency thin film capacitor | 肇庆市华师大光电产业研究院 | 2020-09-15 | — | — | CN | claimed |
| US-7326984-B2 | MIS capacitor and method of formation | MICRON TECHNOLOGY, INC (US) | 2008-02-05 | — | — | US | claimed |
| US-20070138529-A1 | MIS capacitor and method of formation | ROUND ROCK RESEARCH, LLC | 2007-06-21 | — | — | US | claimed |
| US-7164165-B2 | MIS capacitor | MICRON TECHNOLOGY, INC. (US) | 2007-01-16 | — | — | US | claimed |
| US-20060244027-A1 | MIS capacitor and method of formation | ROUND ROCK RESEARCH, LLC | 2006-11-02 | — | — | US | claimed |
| US-20060128108-A1 | Method for forming a titanium nitride layer and method for forming a lower electrode of a MIM capacitor using the titanium nitride layer | SAMSUNG ELECTRONICS CO., LTD. | 2006-06-15 | — | — | US | claimed |
| US-7029985-B2 | Method of forming MIS capacitor | MICRON TECHNOLOGY, INC. (US) | 2006-04-18 | — | — | US | claimed |
| US-6753618-B2 | MIM capacitor with metal nitride electrode materials and method of formation | MICRON TECHNOLOGY, INC. | 2004-06-22 | — | — | US | claimed |
| US-20040046197-A1 | MIS capacitor and method of formation | ROUND ROCK RESEARCH, LLC | 2004-03-11 | — | — | US | claimed |
| US-20030213987-A1 | MIS capacitor and method of formation | ROUND ROCK RESEARCH, LLC | 2003-11-20 | — | — | US | claimed |
| US-20030205729-A1 | MIM capacitor with metal nitride electrode materials and method of formation | ROUND ROCK RESEARCH, LLC | 2003-11-06 | — | — | US | claimed |
| WO-2003079417-A2 | MIM CAPACITOR WITH METAL NITRIDE ELECTRODE MATERIALS AND METHOD OF FORMATION | MICRON TECHNOLOGY, INC. (US) | 2003-09-25 | — | — | WO | claimed |
| US-20030168750-A1 | MIM capacitor with metal nitride electrode materials and method of formation | ROUND ROCK RESEARCH, LLC | 2003-09-11 | — | — | US | claimed |
| CN-118299245-A | Monolithic modular high frequency plasma source | 应用材料公司 | 2024-07-05 | — | — | CN | disclosed |
| CN-114424318-B | Monolithic modular high frequency plasma source | 应用材料公司 | 2024-03-12 | — | — | CN | disclosed |
| WO-2003079417-A2 | MIM CAPACITOR WITH METAL NITRIDE ELECTRODE MATERIALS AND METHOD OF FORMATION | MICRON TECHNOLOGY, INC. (US) | 2003-09-25 | — | — | WO | disclosed |
| US-20030168750-A1 | MIM capacitor with metal nitride electrode materials and method of formation | ROUND ROCK RESEARCH, LLC | 2003-09-11 | — | — | US | disclosed |