⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2701619 | 1.00 | — | — | |
| SCHEMBL36991 | 0.89 | — | — | |
| SCHEMBL22129636 | 0.89 | — | — | |
| SCHEMBL6065835 | 0.89 | — | — | |
| SCHEMBL11183068 | 0.89 | — | — | |
| Methyl Alcohol SCHEMBL680896 | 0.86 | — | — | |
| Charcoal, Activated SCHEMBL9015473 | 0.85 | — | — | |
| SCHEMBL31273742 | 0.85 | — | — | |
| SCHEMBL10345890 | 0.85 | — | — | |
| Potassium SCHEMBL31207301 | 0.85 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7351521-B2 | Photoresist composition for deep ultraviolet lithography | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2008-04-01 | — | — | US | disclosed |
| US-20070172762-A1 | Photoresist composition for deep ultraviolet lithography | DAMMEL RALPH R | 2007-07-26 | — | — | US | disclosed |
| US-20070154841-A1 | Photoresist composition for deep ultraviolet lithography | AZ ELECTRONIC MATERIALS USA CORP. | 2007-07-05 | — | — | US | disclosed |
| US-7211366-B2 | Photoresist composition for deep ultraviolet lithography | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2007-05-01 | — | — | US | disclosed |
| EP-1602011-A2 | PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY | AZ Electronic Materials USA Corp. (US) | 2005-12-07 | — | — | EP | disclosed |
| US-6884564-B2 | Fluorinated polymers having ester groups and photoresists for microlithography | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 2005-04-26 | — | — | US | disclosed |
| US-20040180287-A1 | Fluorinated polymers having ester groups and photoresists for microlithography | E.I. DU PONT DE NEMOURS AND COMPANY | 2004-09-16 | — | — | US | disclosed |
| WO-2004074928-A2 | PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2004-09-02 | — | — | WO | disclosed |
| US-20040166434-A1 | Photoresist composition for deep ultraviolet lithography | AZ ELECTRONIC MATERIALS USA CORP. | 2004-08-26 | — | — | US | disclosed |
| US-20040166433-A1 | Photoresist composition for deep ultraviolet lithography | AZ ELECTRONIC MATERIALS USA CORP. | 2004-08-26 | — | — | US | disclosed |