⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9436398 | 1.00 | — | — | |
| Phosphine SCHEMBL8229578 | 0.87 | — | — | |
| SCHEMBL728491 | 0.87 | — | — | |
| SCHEMBL418295 | 0.87 | — | — | |
| SCHEMBL2208853 | 0.87 | — | — | |
| SCHEMBL5455529 | 0.87 | — | — | |
| Silver SCHEMBL15462397 | 0.87 | — | — | |
| SCHEMBL19715970 | 0.87 | — | — | |
| SCHEMBL61699 | 0.87 | — | — | |
| SCHEMBL132332 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 41852 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260150439-A1 | DUAL-BAND LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF | TAIWAN-ASIA SEMICONDUCTOR CORPORATION (TW) | 2026-05-28 | — | — | US | claimed |
| CN-114424417-B | Method, system and apparatus for higher order mode suppression | NLIGHT, INC. (US) | 2026-05-26 | — | — | CN | claimed |
| CN-119758521-B | Novel continuous constraint state-based etching-free optical waveguide and dispersion regulation and control method | JILIN UNIVERSITY (CN) | 2026-05-26 | — | — | CN | claimed |
| CN-115248105-B | Beam quality dynamic measurement device based on fast deflection mirror and micro lens group | Hangzhou Institute of advanced studies National University of science and technology (CN) | 2026-05-26 | — | — | CN | claimed |
| CN-114551356-B | Semiconductor structure, forming method thereof and SRAM device | 中芯国际集成电路制造(上海)有限公司 | 2026-05-22 | — | — | CN | claimed |
| CN-116031280-B | Semiconductor structure and forming method thereof | 北方集成电路技术创新中心(北京)有限公司 | 2026-05-22 | — | — | CN | claimed |
| CN-122059899-A | Organic ultraviolet light absorbing material, light stabilizing adhesive film and application thereof | 上海住阳新能源科技有限公司 | 2026-05-19 | — | — | CN | claimed |
| WO-2026098182-A1 | AVALANCHE PHOTODIODE, PHOTOELECTRIC DETECTION CHIP, AND OPTICAL COMMUNICATION DEVICE | 华为技术有限公司 | 2026-05-15 | — | — | WO | claimed |
| CN-122054679-A | Semiconductor device design with capped semiconductor layer | 台湾积体电路制造股份有限公司 | 2026-05-15 | — | — | CN | claimed |
| CN-116207179-B | Vertical single photon avalanche diode device and preparation method thereof | 南京芯视界微电子科技有限公司 | 2026-05-15 | — | — | CN | claimed |
| EP-0042066-A2 | Intermetallic semiconductor devices | International Business Machines Corporation (US) | 1981-12-23 | — | — | EP | claimed |
| US-4286373-A | Method of making negative electron affinity photocathode | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY (US) | 1981-09-01 | — | — | US | claimed |
| EP-0025668-A1 | Process for purifying group III elements and epitaxial growth of semiconductor compounds | THE POST OFFICE (GB) | 1981-03-25 | — | — | EP | claimed |
| US-4075651-A | HIGH SPEED FET EMPLOYING TERNARY AND QUARTERNARY III-V ACTIVE LAYERS | VARIAN ASSOCIATES, INC. (US) | 1978-02-21 | — | — | US | claimed |
| US-4032951-A | ELECTRONIC DEVICES | BELL TELEPHONE LABORATORIES, INCORPORATED (US) | 1977-06-28 | — | — | US | claimed |
| US-3995303-A | Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector | BELL TELEPHONE LABORATORIES, INCORPORATED (US) | 1976-11-30 | — | — | US | claimed |
| US-3984261-A | Ohmic contact | RCA CORPORATION (US) | 1976-10-05 | — | — | US | claimed |
| US-3966513-A | Method of growing by epitaxy from the vapor phase a material on substrate of a material which is not stable in air | U.S. PHILIPS CORPORATION (US) | 1976-06-29 | — | — | US | claimed |
| US-3951698-A | Dual use of epitaxy seed crystal as tube input window and cathode structure base | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY (US) | 1976-04-20 | — | — | US | claimed |
| US-3932883-A | Photocathodes | The British Secretary of State for Defense (EN) | 1976-01-13 | — | — | US | claimed |