SCHEMBL728491

SCHEMBL728491

[As-3].[As-3].[As-3].[As-3].[As-3].[As-3].[As-3].[As-3].[Ga+3].[Ga+3].[Ga+3].[In+3].[In+3].[In+3].[Mn+2].[Mn+2].[Mn+2]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1628422 0.87
SCHEMBL48768 0.87
SCHEMBL9436398 0.87
SCHEMBL233486 0.87
Silver SCHEMBL15462397 0.75
SCHEMBL2208853 0.75
SCHEMBL730126 0.75
SCHEMBL5455529 0.75
SCHEMBL16333782 0.75
SCHEMBL19715970 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9093163-B2 Magnetoresistive device HITACHI, LTD. (JP) 2015-07-28 US disclosed
EP-2015307-B1 Magnetoresistive device HITACHI LTD (JP) 2013-04-10 EP disclosed
US-8138758-B2 Method of controlling a magnetoresistive device using an electric field pulse HITACHI, LTD. (JP) 2012-03-20 US disclosed
EP-2209123-B1 Magnetoresistive memory HITACHI LTD (JP) 2011-12-21 EP disclosed
US-20110170339-A1 MAGNETORESISTIVE DEVICE UNIVERSITE PARIS SUD XI (FR) 2011-07-14 US disclosed
EP-2209123-A1 Magnetoresistive memory Hitachi Ltd. (JP) 2010-07-21 EP disclosed
US-20090016098-A1 MAGNETORESISTIVE DEVICE HITACHI, LTD. 2009-01-15 US disclosed
EP-2015307-A1 Magnetoresistive device Hitachi Ltd. (JP) 2009-01-14 EP disclosed