⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL35979 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL5697677 | 0.75 | — | — | |
| SCHEMBL31634299 | 0.75 | — | — | |
| SCHEMBL497495 | 0.75 | — | — | |
| SCHEMBL21353820 | 0.75 | — | — | |
| Water SCHEMBL3273561 | 0.75 | — | — | |
| SCHEMBL21174925 | 0.75 | — | — | |
| SCHEMBL20768012 | 0.75 | — | — | |
| SCHEMBL31622460 | 0.75 | — | — | |
| SCHEMBL1061 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-101397138-B | Method for making high-purity silicon dioxide and metallurgical grade polycrystalline silicon | DING YUANJIE | 2013-06-19 | — | — | CN | claimed |
| CN-101397138-A | Method for making high-purity silicon dioxide and metallurgical grade polycrystalline silicon | YUANJIE DING (CN) | 2009-04-01 | — | — | CN | claimed |
| CN-101176189-A | Low dielectric constant cryptocrystal layer and nanostructure | TUBITAK (TR) | 2008-05-07 | — | — | CN | claimed |
| CN-1754853-A | Formula and method for manufacturing hydrophilic antifogging surface of glass substrate | ONID TECHNOLOGY CORP (CN) | 2006-04-05 | — | — | CN | claimed |
| CN-116130356-A | Workpiece processing using deposition and etching processes | 玛特森技术公司 | 2023-05-16 | — | — | CN | disclosed |
| CN-101397138-B | Method for making high-purity silicon dioxide and metallurgical grade polycrystalline silicon | DING YUANJIE | 2013-06-19 | — | — | CN | disclosed |
| CN-101397138-B | Method for making high-purity silicon dioxide and metallurgical grade polycrystalline silicon | DING YUANJIE | 2013-06-19 | — | — | CN | disclosed |
| CN-101176189-B | Low dielectric constant cryptocrystal layer and nanostructure | TUBITAK | 2011-05-11 | — | — | CN | disclosed |
| CN-101397138-A | Method for making high-purity silicon dioxide and metallurgical grade polycrystalline silicon | YUANJIE DING (CN) | 2009-04-01 | — | — | CN | disclosed |
| CN-101397138-A | Method for making high-purity silicon dioxide and metallurgical grade polycrystalline silicon | YUANJIE DING (CN) | 2009-04-01 | — | — | CN | disclosed |
| CN-101176189-A | Low dielectric constant cryptocrystal layer and nanostructure | TUBITAK (TR) | 2008-05-07 | — | — | CN | disclosed |
| US-20080045025-A1 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD | TOKYO ELECTRON LIMITED (JP) | 2008-02-21 | — | — | US | disclosed |
| CN-1754853-A | Formula and method for manufacturing hydrophilic antifogging surface of glass substrate | ONID TECHNOLOGY CORP (CN) | 2006-04-05 | — | — | CN | disclosed |
| CN-1036853-C | Utilization of catalyst in polymerization of olefin hydrocarbon | PHILLIPS PETROLEUM CO (US) | 1997-12-31 | — | — | CN | disclosed |
| EP-0284693-B1 | Low temperature, plasma method of making plasma deposited coatings | ENERGY CONVERSION DEVICES INC (US) | 1994-08-31 | — | — | EP | disclosed |
| CN-1060475-A | The application of catalyzer in olefinic polymerization | PHILLIPS PETROLEUM CO (US) | 1992-04-22 | — | — | CN | disclosed |
| CN-1013200-B | Alumina treated with silicon and/or fluorine | PHILLIPS PETROLEUM CO (US) | 1991-07-17 | — | — | CN | disclosed |
| EP-0284693-A2 | Low temperature, plasma method of making plasma deposited coatings | ENERGY CONVERSION DEVICES, INC. (US) | 1988-10-05 | — | — | EP | disclosed |
| US-4737379-A | VACUUM DEPOSITION USING MICROWAVES | ENERGY CONVERSION DEVICES, INC. (US) | 1988-04-12 | — | — | US | disclosed |
| CN-85101209-A | Alumina treated with silicon and/or fluorine | — | 1987-01-24 | — | — | CN | disclosed |