SCHEMBL493762

SCHEMBL493762

C=C(C)C(=O)OC(CC)(CC)CCCC(F)(F)F

nearest known ligand 0.35

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.35
THRB P10828 1/20 0.33
ALDH1A1 P00352 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19019785 0.83 CYP4F2 (0.39) TSHRTHRBALDH1A1
SCHEMBL20111949 0.83 ALDH1A1 (0.34) TSHRTHRBALDH1A1
SCHEMBL3853129 0.83 TSHR (0.49) TSHRTHRBALDH1A1
SCHEMBL3917226 0.82 ALDH1A1 (0.37) TSHRTHRBALDH1A1
SCHEMBL1204461 0.81 TSHR (0.51) TSHRALDH1A1
SCHEMBL19019774 0.81 CYP4F2 (0.41) TSHRTHRBALDH1A1
SCHEMBL16291366 0.80 TSHR (0.40) TSHRTHRBALDH1A1
SCHEMBL19019805 0.80 TSHR (0.54) TSHRTHRBALDH1A1
SCHEMBL19019803 0.80 CYP4F2 (0.40) TSHRTHRBALDH1A1
SCHEMBL278099 0.80 ALDH1A1 (0.44) TSHRTHRBALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 54 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9244349-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-01-26 US disclosed
US-9244349-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-01-26 US disclosed
US-9244349-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-01-26 US disclosed
US-8980524-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-03-17 US disclosed
US-8980524-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-03-17 US disclosed
US-8535871-B2 Radiation-sensitive resin composition, method for forming a resist pattern, compound, and polymer JSR CORPORATION (JP) 2013-09-17 US disclosed
US-8535871-B2 Radiation-sensitive resin composition, method for forming a resist pattern, compound, and polymer JSR CORPORATION (JP) 2013-09-17 US disclosed
US-8535871-B2 Radiation-sensitive resin composition, method for forming a resist pattern, compound, and polymer JSR CORPORATION (JP) 2013-09-17 US disclosed
US-8530598-B2 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin TOKYO OHKA KOGYO CO., LTD. (JP) 2013-09-10 US disclosed
US-8530598-B2 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin TOKYO OHKA KOGYO CO., LTD. (JP) 2013-09-10 US disclosed
US-20100075249-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-03-25 US disclosed
US-20100075249-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-03-25 US disclosed
US-20100069590-A1 COMPOUND AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2010-03-18 US disclosed
US-20100069590-A1 COMPOUND AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2010-03-18 US disclosed
US-20100069590-A1 COMPOUND AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2010-03-18 US disclosed
US-20090186300-A1 RESIST COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING COPOLYMER TOKYO OHKA KOGYO CO., LTD. (JP) 2009-07-23 US disclosed
US-20090186300-A1 RESIST COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING COPOLYMER TOKYO OHKA KOGYO CO., LTD. (JP) 2009-07-23 US disclosed
US-20090047602-A1 FLUORINE-CONTAINING COMPOUND, RESIST COMPOSITION FOR IMMERSION EXPOSURE, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-19 US disclosed
US-20090047602-A1 FLUORINE-CONTAINING COMPOUND, RESIST COMPOSITION FOR IMMERSION EXPOSURE, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-19 US disclosed
US-20090047602-A1 FLUORINE-CONTAINING COMPOUND, RESIST COMPOSITION FOR IMMERSION EXPOSURE, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-19 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100069590-A1 COMPOUND AND POLYMERIC COMPOUND AFF1, F12, AFF4 TSHR 1409/4885THRB 3925/4885ALDH1A1 936/4885
US-20090047602-A1 FLUORINE-CONTAINING COMPOUND, RESIST COMPOSITION FOR IMMERSION EXPOSURE, AND METHOD OF FORMING RESIST PATTERN RFC2, AFF1, RFC1 TSHR 750/4885THRB 1591/4885ALDH1A1 2812/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.