SCHEMBL4949010

SCHEMBL4949010

NC(=O)c1cc(Cc2ccc(N)cc2)ccc1N

nearest known ligand 0.62

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.62
CDC25B P30305 1/20 0.62
CASP6 P55212 1/20 0.62
RCE1 Q9Y256 1/20 0.62
MAPT P10636 3/20 0.56
TSHR P16473 2/20 0.56
KDM4E B2RXH2 2/20 0.56
GAA P10253 2/20 0.56
HPGD P15428 1/20 0.56
ALOX15 P16050 1/20 0.56
HSD17B10 Q99714 1/20 0.56
CYP3A4 P08684 3/20 0.50
TDP1 Q9NUW8 2/20 0.50
IKBKB O14920 1/20 0.46
MEN1 O00255 2/20 0.46
POLB P06746 2/20 0.46
KMT2A Q03164 2/20 0.46
RAB9A P51151 1/20 0.46
MITF O75030 1/20 0.43
USP2 O75604 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29700063 0.93 ALDH1A1 (0.71) ALDH1A1CDC25BCASP6RCE1MAPT
SCHEMBL24574268 0.93 ALDH1A1 (0.71) ALDH1A1CDC25BCASP6RCE1MAPT
SCHEMBL4989005 0.86 ALDH1A1 (0.86) ALDH1A1CDC25BCASP6RCE1MAPT
SCHEMBL4952428 0.86 ALDH1A1 (0.50) ALDH1A1CDC25BCASP6RCE1MAPT
SCHEMBL4953606 0.85 ALDH1A1 (0.57) ALDH1A1CDC25BCASP6RCE1MAPT
SCHEMBL27663595 0.79 ALDH1A1 (0.53) ALDH1A1CDC25BCASP6RCE1MAPT
SCHEMBL22445528 0.79 ALDH1A1 (0.53) ALDH1A1CDC25BCASP6RCE1MAPT
SCHEMBL1708814 0.78 KMT2A (0.65) ALDH1A1CDC25BCASP6RCE1MAPT
SCHEMBL17058417 0.78 ALDH1A1 (0.52) ALDH1A1CDC25BCASP6RCE1MAPT
SCHEMBL9275440 0.78 ALDH1A1 (0.52) ALDH1A1CDC25BCASP6RCE1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 37 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-5115089-A Heat resistant polymers for electrical insulation, protective coatings for electronics formed by reaction of tetracarboxylic dianhydrides and diaminoamides and diamines HITACHI CHEMICAL CO., LTD. (JP) 1992-05-19 US claimed
US-4485234-A FROM DIAMINE, DIANHYDRIDE, AND DIAMINECARBONAMIDE HITACHI CHEMICAL COMPANY, LTD. (JP) 1984-11-27 US claimed
US-7373064-B2 Polymeric optical waveguide film HITACHI CHEMICAL CO., LTD. (JP) 2008-05-13 US disclosed
US-7189488-B2 Polyimide precursor, manufacturing method thereof, and resin composition using polyimide precursor KANEKA CORPORATION (JP) 2007-03-13 US disclosed
US-7162134-B2 Polymeric optical waveguide film HITACHI CHEMICAL CO., LTD. (JP) 2007-01-09 US disclosed
US-20060291790-A1 POLYMERIC OPTICAL WAVEGUIDE FILM HITACHI CHEMICAL CO., LTD. (JP) 2006-12-28 US disclosed
US-7139460-B2 Optical element, method of producing optical elements, coating device, and coating method HITACHI CHEMICAL COMPANY, LTD. (JP) 2006-11-21 US disclosed
US-20060251379-A1 Optical element, process for producing optical element, coating equipment, and coating method KURODA TOSHIHIRO 2006-11-09 US disclosed
US-20050002631-A1 Polymeric optical waveguide film HITACHI CHEMICAL CO., LTD. (JP) 2005-01-06 US disclosed
US-20040234222-A1 Optical element, method of producing optical elements, coating device, and coating method HITACHI CHEMICAL COMPANY, LTD. (JP) 2004-11-25 US disclosed
US-6810181-B2 LAYER OF A FLUORINE-CONTAINING POLYIMIDE AND A LAYER OF A FLUORINE-FREE RESIN IS INTERPOSED BETWEEN THE POLYIMIDE LAYER AND THE ELECTRODE HITACHI CHEMICAL CO., LTD. (JP) 2004-10-26 US disclosed
EP-0308270-A2 Processes for preparation of polyimide-isoindoquinazoline dione and precursor thereof Hitachi Chemical Co., Ltd. (JP) 1989-03-22 EP disclosed
US-4758476-A Polyimide precursor resin composition and semiconductor device using the same HITACHI CHEMICAL COMPANY, LTD. (JP) 1988-07-19 US disclosed
US-4650849-A Photosensitive curable resin composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 1987-03-17 US disclosed
EP-0184937-A2 Polyimide precursor resin composition and semiconductor device using the same Hitachi Chemical Co., Ltd. (JP) 1986-06-18 EP disclosed
US-4497922-A Compositions of materials for forming protective film in semiconductor device HITACHI CHEMICAL COMPANY, LTD. (JP) 1985-02-05 US disclosed
US-4485234-A FROM DIAMINE, DIANHYDRIDE, AND DIAMINECARBONAMIDE HITACHI CHEMICAL COMPANY, LTD. (JP) 1984-11-27 US disclosed
US-4447596-A REACTING DIAMINE AND DIANHYDRIDE AT LOW TEMPERATURE, THEN ADJUSTMENT OF VISCOSITY BY HEATING HITACHI CHEMICAL COMPANY, LTD. (JP) 1984-05-08 US disclosed
US-4338426-A Intermediate, copolymer resin and production thereof HITACHI CHEMICAL COMPANY, LTD. (JP) 1982-07-06 US disclosed
US-4225702-A Method of preparing polyamide acid type intermediates for processing of semiconductors HITACHI CHEMICAL COMPANY, LTD. (JP) 1980-09-30 US disclosed