⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4990077 | 0.75 | — | — | |
| SCHEMBL495704 | 0.73 | — | — | |
| SCHEMBL4987267 | 0.71 | — | — | |
| SCHEMBL10949205 | 0.71 | — | — | |
| SCHEMBL235326 | 0.71 | — | — | |
| SCHEMBL10948694 | 0.71 | — | — | |
| SCHEMBL10947506 | 0.71 | — | — | |
| SCHEMBL235635 | 0.67 | — | — | |
| SCHEMBL1143073 | 0.67 | — | — | |
| SCHEMBL4209661 | 0.67 | LMNA (0.30) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4747425-A1 | INHERENT AREA SELECTIVE DEPOSITION OF SILICON-CONTAINING DIELECTRIC ON PATTERNED SUBSTRATE | GELEST, INC. (US) | 2026-05-27 | — | — | EP | claimed |
| US-20250112041-A1 | INHERENT AREA SELECTIVE DEPOSITION OF SILICON-CONTAINING DIELECTRIC ON PATTERNED SUBSTRATE | GELEST, INC. | 2025-04-03 | — | — | US | claimed |
| WO-2025019704-A1 | INHERENT AREA SELECTIVE DEPOSITION OF SILICON-CONTAINING DIELECTRIC ON PATTERNED SUBSTRATE | GELEST, INC. (US) | 2025-01-23 | — | — | WO | claimed |
| EP-4747425-A1 | INHERENT AREA SELECTIVE DEPOSITION OF SILICON-CONTAINING DIELECTRIC ON PATTERNED SUBSTRATE | GELEST, INC. (US) | 2026-05-27 | — | — | EP | disclosed |
| US-20250112041-A1 | INHERENT AREA SELECTIVE DEPOSITION OF SILICON-CONTAINING DIELECTRIC ON PATTERNED SUBSTRATE | GELEST, INC. | 2025-04-03 | — | — | US | disclosed |
| WO-2025019704-A1 | INHERENT AREA SELECTIVE DEPOSITION OF SILICON-CONTAINING DIELECTRIC ON PATTERNED SUBSTRATE | GELEST, INC. (US) | 2025-01-23 | — | — | WO | disclosed |
| US-20240026527-A1 | METHOD OF DEPOSITING SILICON BASED DIELECTRIC FILM | APPLIED MATERIALS, INC. (US) | 2024-01-25 | — | — | US | disclosed |
| WO-2024020132-A1 | METHOD OF DEPOSITING SILICON BASED DIELECTRIC FILM | APPLIED MATERIALS, INC. (US) | 2024-01-25 | — | — | WO | disclosed |
| US-7396951-B2 | Process for production of trialkoxyhalosilanes | UBE INDUSTRIES, LTD. (JP) | 2008-07-08 | — | — | US | disclosed |
| US-7396950-B2 | Process for production of trialkoxyhalosilanes | UBE INDUSTRIES, LTD. (JP) | 2008-07-08 | — | — | US | disclosed |
| US-20070255067-A1 | PROCESS FOR PRODUCTION OF TRIALKOXYHALOSILANES | UBE INDUSTRIES, LTD. (JP) | 2007-11-01 | — | — | US | disclosed |
| US-20070255068-A1 | Reacting a tetrahalosilane with a tetraalkoxysilane in an alkanol with the same alkoxy group to form a triethoxysilyl halide, and aminating the halide with a dialkylamine to form a (dialkylamino)trialkoxysilane; lower cost | UBE INDUSTRIES, LTD. (JP) | 2007-11-01 | — | — | US | disclosed |
| US-20060258825-A1 | Process for production of trialkoxyhalosilanes, process for production of alkoxy (dialkylamino) silanes, catalysts for (co)polymerization of a-olefins, catalyst components therefor, and processes for polymerization of a-olefins with the catalysts | UBE INDUSTRIES, LTD. (JP) | 2006-11-16 | — | — | US | disclosed |
| EP-1671977-A1 | PROCESS FOR PRODUCTION OF TRIALKOXYHALOSILANES, PROCESS FOR PRODUCTION OF ALKOXY(DIALKYLAMINO)SILANES, CATALYSTS FOR (CO)POLYMERIZATION OF ALPHA-OLEFINS, CATALYST COMPONENTS THEREFOR, AND PROCESS ES FOR POLYMERIZATION OF ALPHA-OLEFINS WITH THE CATALYSTS | Ube Industries, Ltd. (JP) | 2006-06-21 | — | — | EP | disclosed |