SCHEMBL5002822

SCHEMBL5002822

CCC=C(Cl)Cc1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CES2 O00748 1/20 0.41
CES1 P23141 1/20 0.41
AKR1B1 P15121 1/20 0.41
TP53 P04637 1/20 0.41
FNTA P49354 1/20 0.39
FNTB P49356 1/20 0.39
L3MBTL1 Q9Y468 3/20 0.37
TDP1 Q9NUW8 2/20 0.37
HPGD P15428 1/20 0.37
TSHR P16473 3/20 0.36
ABCC4 O15439 1/20 0.36
LMNA P02545 1/20 0.36
GAA P10253 1/20 0.36
PTGS1 P23219 1/20 0.36
HTT P42858 1/20 0.36
MEN1 O00255 1/20 0.36
KMT2A Q03164 1/20 0.36
HDAC8 Q9BY41 1/20 0.36
HDAC6 Q9UBN7 1/20 0.36
CYP3A4 P08684 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11403703 0.81 CES1 (0.43) CES2CES1AKR1B1FNTAFNTB
SCHEMBL11054115 0.81 CES1 (0.43) CES2CES1AKR1B1FNTAFNTB
SCHEMBL11054117 0.81 CES1 (0.43) CES2CES1AKR1B1FNTAFNTB
SCHEMBL11423375 0.80 CES2 (0.46) CES2CES1AKR1B1TP53FNTA
SCHEMBL11200644 0.79 CES1 (0.41) CES2CES1AKR1B1FNTAFNTB
SCHEMBL11200646 0.79 CES1 (0.41) CES2CES1AKR1B1FNTAFNTB
SCHEMBL1071378 0.77 CES2 (0.43) CES2CES1AKR1B1TP53L3MBTL1
SCHEMBL10972896 0.74 CES1 (0.44) CES2CES1AKR1B1FNTAFNTB
SCHEMBL10454430 0.74 CES1 (0.50) CES2CES1AKR1B1FNTAFNTB
SCHEMBL10972898 0.74 CES1 (0.44) CES2CES1AKR1B1FNTAFNTB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7413947-B2 Integrated high voltage capacitor having a top-level dielectric layer and a method of manufacture therefor TEXAS INSTRUMENTS INCORPORATED (US) 2008-08-19 US claimed
US-20060189068-A1 Integrated high voltage capacitor having a top-level dielectric layer and a method of manufacture therefor TEXAS INSTRUMENTS INC. (US) 2006-08-24 US claimed
US-7413947-B2 Integrated high voltage capacitor having a top-level dielectric layer and a method of manufacture therefor TEXAS INSTRUMENTS INCORPORATED (US) 2008-08-19 US disclosed
US-20060189068-A1 Integrated high voltage capacitor having a top-level dielectric layer and a method of manufacture therefor TEXAS INSTRUMENTS INC. (US) 2006-08-24 US disclosed