⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6012623 | 1.00 | — | — | |
| SCHEMBL18097 | 0.87 | — | — | |
| SCHEMBL17159974 | 0.87 | — | — | |
| SCHEMBL138233 | 0.87 | — | — | |
| SCHEMBL17159972 | 0.87 | — | — | |
| Zinc Ion SCHEMBL516973 | 0.87 | — | — | |
| SCHEMBL16037 | 0.82 | — | — | |
| SCHEMBL10578755 | 0.82 | — | — | |
| SCHEMBL18886767 | 0.82 | — | — | |
| SCHEMBL50218 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 4533 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12046669-B2 | HEMT and method of fabricating the same | UNITED MICROELECTRONICS CORP. (TW) | 2024-07-23 | — | — | US | claimed |
| US-12027616-B1 | Embedded non-overlapping source field design for improved GaN HEMT microwave performance | GLOBAL COMMUNICATION SEMICONDUCTORS, LLC (US) | 2024-07-02 | — | — | US | claimed |
| US-12015076-B2 | HEMT and method of fabricating the same | UNITED MICROELECTRONICS CORP. (TW) | 2024-06-18 | — | — | US | claimed |
| CN-118213399-A | P-type mixed gate gallium nitride HEMT power transistor and manufacturing method | 湖州闪芯微电子科技有限公司 | 2024-06-18 | — | — | CN | claimed |
| CN-118156307-A | P-channel transistor structure based on tunneling junction and preparation method thereof | 西安电子科技大学广州研究院 | 2024-06-07 | — | — | CN | claimed |
| CN-115260456-B | Quantum dot composition and light-emitting device | 财团法人工业技术研究院 | 2024-06-04 | — | — | CN | claimed |
| US-12002681-B2 | High electron mobility transistor and fabricating method of the same | UNITED MICROELECTRONICS CORP. (TW) | 2024-06-04 | — | — | US | claimed |
| EP-4374418-A2 | STRESS MANAGEMENT LAYER FOR GAN HEMT | IQE plc (GB) | 2024-05-29 | — | — | EP | claimed |
| WO-2024107467-A1 | DOUBLE CONTINUOUS GRADED BACK BARRIER GROUP III-NITRIDE HIGH ELECTRON MOBILITY HETEROSTRUCTURE | RAYTHEON COMPANY (US) | 2024-05-23 | — | — | WO | claimed |
| WO-2024107372-A1 | VISUALIZATION SYSTEM INCLUDING DIRECT AND CONVERTED POLYCHROMATIC LED ARRAY | LUMILEDS LLC (US) | 2024-05-23 | — | — | WO | claimed |
| CN-1473363-A | Group III nitride light emitting devices with gallium-free layers | ���﹫˾ | 2004-02-04 | — | — | CN | claimed |
| WO-2004008495-A2 | NITRIDE-BASED TRANSISTORS AND METHODS OF FABRICATION THEREOF USING NON-ETCHED CONTACT RECESSES | CREE, INC. (US) | 2004-01-22 | — | — | WO | claimed |
| EP-1344260-A2 | GROUP III NITRIDE LIGHT EMITTING DEVICES WITH GALLIUM-FREE LAYERS | CREE, INC. (US) | 2003-09-17 | — | — | EP | claimed |
| US-20030164506-A1 | Light emitting devices with group III nitride contact layer and superlattice | EDMOND JOHN ADAM (US) | 2003-09-04 | — | — | US | claimed |
| US-20030122130-A1 | Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate having a mechanical decoupling layer | MOTOROLA, INC. (US) | 2003-07-03 | — | — | US | claimed |
| WO-2003038877-A2 | LOW TEMPERATURE FORMATION OF BACKSIDE OHMIC CONTACTS FOR VERTICAL DEVICES | CREE, INC. (US) | 2003-05-08 | — | — | WO | claimed |
| US-20020179910-A1 | Low temperature formation of backside ohmic contacts for vertical devices | WOLFSPEED, INC. | 2002-12-05 | — | — | US | claimed |
| CN-1372306-A | Method for activating high-resistance P-type thin film into low-resistance P-type thin film | LIANWEI LEIJING SCIENCE AND TE (CN) | 2002-10-02 | — | — | CN | claimed |
| WO-2002037579-A2 | GROUP III NITRIDE LIGHT EMITTING DEVICES WITH GALLIUM-FREE LAYERS | CREE, INC. (US) | 2002-05-10 | — | — | WO | claimed |
| US-5650198-A | Defect reduction in the growth of group III nitrides | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 1997-07-22 | — | — | US | claimed |