SCHEMBL5050697

SCHEMBL5050697

CC(C)(C)O[SiH](O[SiH3])OC(C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL273377 0.78 ALDH1A1 (0.36)
SCHEMBL433792 0.72 TSHR (0.31)
SCHEMBL11690628 0.69 ALDH1A1 (0.38)
SCHEMBL10644539 0.69 ALDH1A1 (0.38)
SCHEMBL11113979 0.68
Methane SCHEMBL28053176 0.67 ALDH1A1 (0.35)
SCHEMBL21049668 0.65 TSHR (0.31)
SCHEMBL7529768 0.65
SCHEMBL4297925 0.63
SCHEMBL27816146 0.63

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
JP-5333559-A None JP disclosed
JP-5265224-A None JP disclosed
CN-117878120-A Semiconductor device with a semiconductor device having a plurality of semiconductor chips 三星电子株式会社 2024-04-12 CN disclosed
CN-116995076-A Semiconductor device with a semiconductor layer having a plurality of semiconductor layers 三星电子株式会社 2023-11-03 CN disclosed
CN-107887362-B Semiconductor device and method of manufacturing the same 三星电子株式会社 2023-07-07 CN disclosed
CN-113540107-A Nonvolatile memory device 三星电子株式会社 2021-10-22 CN disclosed
WO-2008009680-A1 NOVEL HYDROGEN-RICH 1,3-DIALKOXYDISILOXANES AND PROCESSES FOR THEIR PREPARATION AND THEIR USE TECHNISCHE UNIVERSITÄT BERGAKADEMIE FREIBERG (DE) 2008-01-24 WO disclosed
US-5907382-A Transparent conductive substrate and display apparatus KABUSHIKI KAISHA TOSHIBA (JP) 1999-05-25 US disclosed
US-5858541-A Glass composite material, precursor thereof, nitrogen-containing composite material and optical device KABUSHIKI KAISHA TOSHIBA (JP) 1999-01-12 US disclosed
US-5717051-A Glass composite material, precursor thereof, nitrogen-containing composite material and optical device KABUSHIKI KAISHA TOSHIBA (JP) 1998-02-10 US disclosed
JP-H05333559-A METHOD FOR FORMING PATTERN BY THREE-LAYER RESIST PROCESS OKI ELECTRIC IND CO LTD 1993-12-17 JP disclosed
JP-H05265224-A PATTERN FORMING METHOD BY THREE-LAYER RESIST METHOD OKI ELECTRIC IND CO LTD 1993-10-15 JP disclosed