⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1993644 | 0.82 | — | — | |
| SCHEMBL20003413 | 0.82 | — | — | |
| SCHEMBL30129268 | 0.71 | — | — | |
| SCHEMBL28855 | 0.71 | — | — | |
| SCHEMBL29353695 | 0.71 | — | — | |
| SCHEMBL29375650 | 0.71 | — | — | |
| SCHEMBL3264485 | 0.71 | — | — | |
| SCHEMBL8764947 | 0.71 | — | — | |
| SCHEMBL9615417 | 0.71 | — | — | |
| SCHEMBL29872025 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 570 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3320562-B1 | FORMULATIONS TO SELECTIVELY ETCH SILICON GERMANIUM RELATIVE TO GERMANIUM | ENTEGRIS INC (US) | 2024-08-28 | — | — | EP | claimed |
| US-11777016-B2 | Method of forming backside power rails | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-10-03 | — | — | US | claimed |
| US-20220336641-A1 | Method of Forming Backside Power Rails | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-10-20 | — | — | US | claimed |
| CN-107851660-B | Formulations for selective etching of silicon germanium relative to germanium | 恩特格里斯公司 | 2022-02-01 | — | — | CN | claimed |
| US-10957547-B2 | Formulations to selectively etch silicon germanium relative to germanium | ENTEGRIS, INC. (US) | 2021-03-23 | — | — | US | claimed |
| US-10475658-B2 | Formulations to selectively etch silicon and germanium | ENTEGRIS, INC. (US) | 2019-11-12 | — | — | US | claimed |
| US-20180197746-A1 | FORMULATIONS TO SELECTIVELY ETCH SILICON GERMANIUM RELATIVE TO GERMANIUM | TRUIST BANK, AS NOTES COLLATERAL AGENT | 2018-07-12 | — | — | US | claimed |
| EP-3320562-A1 | FORMULATIONS TO SELECTIVELY ETCH SILICON GERMANIUM RELATIVE TO GERMANIUM | Entegris, Inc. (US) | 2018-05-16 | — | — | EP | claimed |
| US-20180083114-A1 | MASKLESS METHOD TO REDUCE SOURCE-DRAIN CONTACT RESISTANCE IN CMOS DEVICES | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2018-03-22 | — | — | US | claimed |
| US-20160343576-A1 | FORMULATIONS TO SELECTIVELY ETCH SILICON AND GERMANIUM | TRUIST BANK, AS NOTES COLLATERAL AGENT | 2016-11-24 | — | — | US | claimed |
| US-20070190722-A1 | METHOD TO FORM UPWARD POINTING P-I-N DIODES HAVING LARGE AND UNIFORM CURRENT | SANDISK TECHNOLOGIES LLC | 2007-08-16 | — | — | US | claimed |
| US-20070187767-A1 | SEMICONDUCTOR DEVICE INCLUDING MISFET | KABUSHIKI KAISHA TOSHIBA | 2007-08-16 | — | — | US | claimed |
| US-20070164309-A1 | METHOD OF MAKING A DIODE READ/WRITE MEMORY CELL IN A PROGRAMMED STATE | SANDISK 3D LLC | 2007-07-19 | — | — | US | claimed |
| US-20070164388-A1 | MEMORY CELL COMPRISING A DIODE FABRICATED IN A LOW RESISTIVITY, PROGRAMMED STATE | SANDISK 3D LLC | 2007-07-19 | — | — | US | claimed |
| US-20070087508-A1 | METHOD FOR MAKING A P-I-N DIODE CRYSTALLIZED ADJACENT TO A SILICIDE IN SERIES WITH A DIELECTRIC ANTIFUSE | SANDISK TECHNOLOGIES LLC | 2007-04-19 | — | — | US | claimed |
| US-20070069217-A1 | P-I-N DIODE CRYSTALLIZED ADJACENT TO A SILICIDE IN SERIES WITH A DIELECTRIC ANITFUSE | SANDISK TECHNOLOGIES LLC | 2007-03-29 | — | — | US | claimed |
| US-6309967-B1 | Method of forming a contact | MICRON TECHNOLOGY, INC. | 2001-10-30 | — | — | US | claimed |
| US-5725573-A | Medical implants made of metal alloys bearing cohesive diamond like carbon coatings | SOUTHWEST RESEARCH INSTITUTE (US) | 1998-03-10 | — | — | US | claimed |
| US-5644166-A | IMPROVED DIFFUSION BARRIERS; LOW RESISTANCE CONTACTS | MICRON TECHNOLOGY, INC. (US) | 1997-07-01 | — | — | US | claimed |
| US-5401674-A | Germanium implant for use with ultra-shallow junctions | ADVANCED MICRO DEVICES (US) | 1995-03-28 | — | — | US | claimed |