SCHEMBL5068823

SCHEMBL5068823

CC(=O)N(C)[Si](C)(C)CCC(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31114501 0.85
SCHEMBL29367348 0.82 CHRM2 (0.31)
SCHEMBL31114571 0.82
SCHEMBL31114528 0.80
SCHEMBL31114610 0.79
SCHEMBL31114592 0.79
SCHEMBL31114590 0.79
SCHEMBL31114598 0.79
SCHEMBL31114562 0.74 ALDH1A1 (0.30)
SCHEMBL30238451 0.73

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111886676-B Method for treating surface of wafer and composition therefor 中央硝子株式会社 2024-09-27 CN claimed
US-7423166-B2 Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2008-09-09 US claimed
US-20040039219-A1 Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films TRUIST BANK, AS NOTES COLLATERAL AGENT 2004-02-26 US claimed
US-7423166-B2 Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2008-09-09 US disclosed
US-20040039219-A1 Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films TRUIST BANK, AS NOTES COLLATERAL AGENT 2004-02-26 US disclosed