SCHEMBL5084766

SCHEMBL5084766

[Mn+2].[Mn+2].[O-2].[O-2].[O-2].[O-2].[O-2].[Pr+3].[Pr+3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30089457 1.00
SCHEMBL599084 0.87
SCHEMBL29833578 0.87
SCHEMBL28208 0.82
SCHEMBL3779810 0.82
SCHEMBL20162287 0.82
SCHEMBL31694990 0.82
SCHEMBL29085 0.82
SCHEMBL20598435 0.82
SCHEMBL29971535 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 51 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3004981-B1 SOLAR CONTROL DEVICE E INK CORP (US) 2024-05-08 EP claimed
CN-111484080-B Neodymium-doped praseodymium manganese oxide wave-absorbing powder material and preparation method thereof 桂林电子科技大学 2022-12-27 CN claimed
US-11323065-B2 Method for fabricating neuron oscillator including thermal insulating device INDIAN INSTITUTE OF TECHNOLOGY BOMBAY (IN) 2022-05-03 US claimed
US-20210242831-A1 METHOD FOR FABRICATING NEURON OSCILLATOR INCLUDING THERMAL INSULATING DEVICE INDIAN INSTITUTE OF TECHNOLOGY BOMBAY (IN) 2021-08-05 US claimed
CN-111484080-A Neodymium-doped praseodymium-manganese oxide wave-absorbing powder material and preparation method thereof 桂林电子科技大学 2020-08-04 CN claimed
US-9053801-B2 Memory cells having ferroelectric materials MICRON TECHNOLOGY, INC. (US) 2015-06-09 US claimed
US-20140153312-A1 MEMORY CELLS HAVING FERROELECTRIC MATERIALS MICRON TECHNOLOGY, INC. (US) 2014-06-05 US claimed
US-20080011996-A1 MULTI-LAYER DEVICE WITH SWITCHABLE RESISTANCE INTERNATIONAL BUSINESS MACHINES CORPORATION 2008-01-17 US claimed
US-6943372-B2 Top emission active matrix OLED and fabricating method thereof AU OPTRONICS CORPORATION (TW) 2005-09-13 US claimed
US-20040135148-A1 [TOP EMISSION ACTIVE MATRIX OLED AND FABRICATING METHOD THEREOF] AU OPTRONICS CORPORATION (TW) 2004-07-15 US claimed
EP-1162175-A1 Rare earth manganese oxide pigments dmc2 Degussa Metals Catalysts Cerdec AG (DE) 2001-12-12 EP claimed
JP-11250924-A None JP disclosed
JP-9190832-A None JP disclosed
EP-3004981-B1 SOLAR CONTROL DEVICE E INK CORP (US) 2024-05-08 EP disclosed
CN-111484080-B Neodymium-doped praseodymium manganese oxide wave-absorbing powder material and preparation method thereof 桂林电子科技大学 2022-12-27 CN disclosed
EP-0803759-A1 PROJECTION IMAGE DISPLAY DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1997-10-29 EP disclosed
JP-H09190832-A CONDUCTIVE ADHESIVE MITSUBISHI HEAVY IND LTD 1997-07-22 JP disclosed
EP-0463803-B1 Liquid crystal element of optical writing type SHARP KK (JP) 1995-05-03 EP disclosed
US-5233450-A LIQUID CRYSTAL PHOTOCONDUCTIVE LAYER INCLUDING A BACK-TO-BACK DIODE SHARP KABUSHIKI KAISHA (JP) 1993-08-03 US disclosed
EP-0463803-A2 Liquid crystal element of optical writing type SHARP KABUSHIKI KAISHA (JP) 1992-01-02 EP disclosed