Known targets — ChEMBL curated mechanism
GABBR1GABBR2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BHMGCRMMP1MMP13MMP7MMP8PTGS1PTGS2ileSpolrplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29833578 | 1.00 | — | — | |
| SCHEMBL22582405 | 0.89 | — | — | |
| SCHEMBL11675986 | 0.87 | — | — | |
| SCHEMBL30089457 | 0.87 | — | — | |
| SCHEMBL5084766 | 0.87 | — | — | |
| SCHEMBL766953 | 0.87 | — | — | |
| SCHEMBL5047615 | 0.75 | — | — | |
| SCHEMBL22973444 | 0.75 | — | — | |
| SCHEMBL29541492 | 0.75 | — | — | |
| SCHEMBL30577933 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 428 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12082423-B2 | Semiconductor device including blocking pattern, electronic system, and method of forming the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-09-03 | — | — | US | claimed |
| US-20230077589-A1 | SEMICONDUCTOR DEVICE INCLUDING BLOCKING PATTERN, ELECTRONIC SYSTEM, AND METHOD OF FORMING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-03-16 | — | — | US | claimed |
| US-11538859-B2 | Semiconductor memory device including variable resistance layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2022-12-27 | — | — | US | claimed |
| US-11323065-B2 | Method for fabricating neuron oscillator including thermal insulating device | INDIAN INSTITUTE OF TECHNOLOGY BOMBAY (IN) | 2022-05-03 | — | — | US | claimed |
| US-20210242831-A1 | METHOD FOR FABRICATING NEURON OSCILLATOR INCLUDING THERMAL INSULATING DEVICE | INDIAN INSTITUTE OF TECHNOLOGY BOMBAY (IN) | 2021-08-05 | — | — | US | claimed |
| CN-111863829-A | Semiconductor memory device including variable resistance layer | 三星电子株式会社 | 2020-10-30 | — | — | CN | claimed |
| US-20200343307-A1 | SEMICONDUCTOR MEMORY DEVICE INCLUDING VARIABLE RESISTANCE LAYER | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2020-10-29 | — | — | US | claimed |
| US-10734577-B2 | Resistive memory device having a template layer | 4DS Memory, Limited (AU) | 2020-08-04 | — | — | US | claimed |
| US-20190296081-A1 | SELECTOR-BASED ELECTRONIC DEVICES, INVERTERS, MEMORY DEVICES, AND COMPUTING DEVICES | INTEL CORPORATION (US) | 2019-09-26 | — | — | US | claimed |
| US-20190288199-A1 | RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER | 4DS Memory, Limited (US) | 2019-09-19 | — | — | US | claimed |
| WO-2009103054-A1 | VOLTAGE EXCITED PIEZOELECTRIC RESISTANCE MEMORY CELL SYSTEM | 4D-S PTY LTD. (AU) | 2009-08-20 | — | — | WO | claimed |
| US-20090027955-A1 | NON-VOLATILE MEMORY DEVICES INCLUDING STACKED NAND-TYPE RESISTIVE MEMORY CELL STRINGS AND METHODS OF FABRICATING THE SAME | SAMSUNG ELECTRONICS CO., LTD. | 2009-01-29 | — | — | US | claimed |
| CN-101354917-A | Non-volatile memory devices including stacked nand-type resistive memory cell strings and methods of fabricating the same | SAMSUNG ELECTRONICS CO LTD (KR) | 2009-01-28 | — | — | CN | claimed |
| US-7324366-B2 | Non-volatile memory architecture employing bipolar programmable resistance storage elements | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-01-29 | — | — | US | claimed |
| US-20080011996-A1 | MULTI-LAYER DEVICE WITH SWITCHABLE RESISTANCE | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2008-01-17 | — | — | US | claimed |
| US-20070247893-A1 | Non-volatile memory architecture employing bipolar programmable resistance storage elements | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-10-25 | — | — | US | claimed |
| US-6965137-B2 | Multi-layer conductive memory device | UNITY SEMICONDUCTOR CORPORATION | 2005-11-15 | — | — | US | claimed |
| EP-1555700-A2 | Method for manufacturing a nonvolatile memory device with a variable resistor | Sharp Kabushiki Kaisha (JP) | 2005-07-20 | — | — | EP | claimed |
| US-20050153504-A1 | Method for manufacturing nonvolatile semiconductor memory device | SHARP KABUSHIKI KAISHA (JP) | 2005-07-14 | — | — | US | claimed |
| US-20040159867-A1 | MULTI-LAYER CONDUCTIVE MEMORY DEVICE | UNITY SEMICONDUCTOR CORPORATION (US) | 2004-08-19 | — | — | US | claimed |