SCHEMBL512554

SCHEMBL512554

C=CCC(O)(C(F)(F)F)C(F)(F)C(F)=C(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13475029 0.81
SCHEMBL13918144 0.80
SCHEMBL239594 0.79 NR1H2 (0.31)
SCHEMBL11913564 0.72
SCHEMBL11342848 0.71
SCHEMBL14268106 0.71
SCHEMBL8732729 0.70
SCHEMBL29543809 0.67
SCHEMBL11348993 0.66
SCHEMBL17867620 0.65

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 209 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7700257-B2 Photoresist composition and resist pattern formation method by the use thereof TOKYO OHKA KOGYO CO., LTD. (JP) 2010-04-20 US claimed
US-7351521-B2 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. (US) 2008-04-01 US claimed
US-7264918-B2 Resist composition for liquid immersion exposure process and method of forming resist pattern therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2007-09-04 US claimed
US-20070172762-A1 Photoresist composition for deep ultraviolet lithography DAMMEL RALPH R 2007-07-26 US claimed
US-20070154841-A1 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. 2007-07-05 US claimed
US-7211366-B2 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. (US) 2007-05-01 US claimed
US-20060166130-A1 Photoresist composition and method for forming resist pattern using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2006-07-27 US claimed
US-20060154170-A1 Resist composition for liquid immersion exposure process and method of forming resist pattern therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2006-07-13 US claimed
EP-1610178-A1 RESIST COMPOSITION FOR LIQUID IMMERSION EXPOSURE PROCESS AND METHOD OF FORMING RESIST PATTERN THEREWITH TOKYO OHKA KOGYO CO., LTD. (JP) 2005-12-28 EP claimed
EP-1602011-A2 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY AZ Electronic Materials USA Corp. (US) 2005-12-07 EP claimed
WO-2004074928-A2 PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY AZ ELECTRONIC MATERIALS USA CORP. (US) 2004-09-02 WO claimed
US-20040166434-A1 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. 2004-08-26 US claimed
US-20040166433-A1 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. 2004-08-26 US claimed
US-11958971-B2 Photocurable composition, method for producing concave-convex structure, method for forming fine concave-convex pattern, and concave-convex structure MITSUI CHEMICALS, INC. (JP) 2024-04-16 US disclosed
US-11474429-B2 Method of producing substrate with fine uneven pattern, resin composition, and laminate MITSUI CHEMICALS, INC. (JP) 2022-10-18 US disclosed
US-11421128-B2 Composition of spin-on materials containing metal oxide nanoparticles and an organic polymer MERCK PATENT GMBH (DE) 2022-08-23 US disclosed
US-20040166434-A1 Photoresist composition for deep ultraviolet lithography AZ ELECTRONIC MATERIALS USA CORP. 2004-08-26 US disclosed
US-20040033439-A1 Resist composition ASAHI GLASS COMPANY LIMITED (JP) 2004-02-19 US disclosed
US-20040013970-A1 Resist composition ASAHI GLASS COMPANY, LIMITED (JP) 2004-01-22 US disclosed
EP-1343047-A2 Resist composition ASAHI GLASS COMPANY LTD. (JP) 2003-09-10 EP disclosed