SCHEMBL515381

SCHEMBL515381

CC1=C([Co]C2=C(C)C=CC2)CC=C1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Carbon Monoxide SCHEMBL3290543 0.93
SCHEMBL3287962 0.80
SCHEMBL4165724 0.74
SCHEMBL4373815 0.69
SCHEMBL8162371 0.67
SCHEMBL4576960 0.67
Iodide SCHEMBL1539638 0.67
Hydrochloric Acid SCHEMBL1539625 0.67
Fluoride Ion SCHEMBL1539666 0.67
Bromide SCHEMBL1539631 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 179 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-113179639-B Method for converting monoisocyanates to urea 陶氏环球技术有限责任公司 2024-07-12 CN claimed
US-20240218503-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. 2024-07-04 US claimed
WO-2024137272-A1 METHOD OF REDUCING METAL GATE RESISTANCE FOR NEXT GENERATION NMOS DEVICE APPLICATION APPLIED MATERIALS, INC. (US) 2024-06-27 WO claimed
US-20240204061-A1 METHOD OF REDUCING METAL GATE RESISTANCE FOR NEXT GENERATION NMOS DEVICE APPLICATION APPLIED MATERIALS, INC. 2024-06-20 US claimed
US-11959167-B2 Selective cobalt deposition on copper surfaces APPLIED MATERIALS, INC. (US) 2024-04-16 US claimed
US-20220298625-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. 2022-09-22 US claimed
US-11384429-B2 Selective cobalt deposition on copper surfaces APPLIED MATERIALS, INC. (US) 2022-07-12 US claimed
CN-113179639-A Process for converting monoisocyanates into ureas 陶氏环球技术有限责任公司 2021-07-27 CN claimed
WO-2021041593-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. (US) 2021-03-04 WO claimed
US-20210062330-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. 2021-03-04 US claimed
US-20090142474-A1 RUTHENIUM AS AN UNDERLAYER FOR TUNGSTEN FILM DEPOSITION APPLIED MATERIALS, INC. 2009-06-04 US claimed
US-20080274279-A1 NOBLE METAL LAYER FORMATION FOR COPPER FILM DEPOSITION APPLIED MATERIALS, INC. 2008-11-06 US claimed
US-20080268635-A1 PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN COPPER CONTACT APPLICATIONS APPLIED MATERIALS, INC. 2008-10-30 US claimed
US-7404985-B2 Noble metal layer formation for copper film deposition APPLIED MATERIALS, INC. (US) 2008-07-29 US claimed
US-20070259111-A1 METHOD AND APPARATUS FOR PHOTO-EXCITATION OF CHEMICALS FOR ATOMIC LAYER DEPOSITION OF DIELECTRIC FILM APPLIED MATERIALS, INC. 2007-11-08 US claimed
WO-2007121249-A2 PROCESS FOR FORMING COBALT-CONTAINING MATERIALS APPLIED MATERIALS, INC. (US) 2007-10-25 WO claimed
US-20070202254-A1 PROCESS FOR FORMING COBALT-CONTAINING MATERIALS APPLIED MATERIALS, INC. 2007-08-30 US claimed
US-20050220998-A1 Noble metal layer formation for copper film deposition APPLIED MATERIALS, INC. 2005-10-06 US claimed
US-5403620-A Catalysis in organometallic CVD of thin metal films REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) 1995-04-04 US claimed
US-5130172-A Coating on a substrate a metal, exposure and vaporization and reaction with hydrogenation THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) 1992-07-14 US claimed