Trifluoromethanesulfonic Acid

Trifluoromethanesulfonic Acid

SCHEMBL515455

O=C1NC(=O)c2cccc3cccc1c23.O=S(=O)(O)C(F)(F)F

nearest known ligand 0.67

Full drug profile on Sugi Atlas →

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PARP1 P09874 3/20 0.67
NPSR1 Q6W5P4 2/20 0.49
MEN1 O00255 4/20 0.48
KMT2A Q03164 4/20 0.48
PKM P14618 2/20 0.48
SMN1; SMN2 Q16637 1/20 0.48
ALDH1A1 P00352 2/20 0.47
CES1 P23141 2/20 0.47
CES2 O00748 1/20 0.47
BCHE P06276 1/20 0.47
MCL1 Q07820 1/20 0.47
PARG Q86W56 1/20 0.43
CASP7 P55210 3/20 0.42
PABPC1 P11940 3/20 0.42
CYP3A4 P08684 2/20 0.42
CASP1 P29466 2/20 0.42
DNMT1 P26358 2/20 0.42
GSK3B P49841 1/20 0.41
TYMS P04818 2/20 0.41
ERCC1 P07992 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL1028232 0.86 PARP1 (0.49) PARP1NPSR1MEN1KMT2APKM
SCHEMBL701608 0.85 PARP1 (0.56) PARP1NPSR1MEN1KMT2APKM
SCHEMBL1895109 0.84 PARP1 (0.74) PARP1NPSR1MEN1KMT2APKM
SCHEMBL703422 0.84 PARP1 (0.54) PARP1NPSR1MEN1KMT2APKM
Phthalimide SCHEMBL31168291 0.84 GSK3B (0.60) PARP1MEN1KMT2ASMN1; SMN2ALDH1A1
Phthalimide SCHEMBL220034 0.84 GSK3B (0.60) PARP1MEN1KMT2ASMN1; SMN2ALDH1A1
Trifluoromethanesulfonic Acid SCHEMBL18319693 0.83 KMT2A (0.49) PARP1NPSR1MEN1KMT2APKM
SCHEMBL2487811 0.82 PARP1 (1.00) PARP1NPSR1MEN1KMT2APKM
SCHEMBL57038 0.82 PARP1 (1.00) PARP1NPSR1MEN1KMT2APKM
SCHEMBL28149432 0.80 PARP1 (0.67) PARP1NPSR1MEN1KMT2APKM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 290 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116449651-A Polyimide positive photoresist based on alkali deactivation mechanism 潍坊星泰克微电子材料有限公司 2023-07-18 CN claimed
CN-114815506-A Polyimide positive photoresist based on alkali deactivation mechanism 潍坊星泰克微电子材料有限公司 2022-07-29 CN claimed
CN-100383666-C Photoresist composition and method for forming photoresist pattern using the same HYNIX SEMICONDUCTOR INC (KR) 2008-04-23 CN claimed
CN-1619419-A Photoresist composition and method for forming photoresist pattern using the same HYNIX SEMICONDUCTOR INC (KR) 2005-05-25 CN claimed
CN-1603952-A Photoresist composition HYNIX SEMICONDUCTOR INC (KR) 2005-04-06 CN claimed
CN-118284854-A Positive ultra-thick photoresist composition 默克专利股份有限公司 2024-07-02 CN disclosed
WO-2024101411-A1 CURABLE COMPOSITION FOR ORGANIC EL ELEMENTS, CURED PRODUCT FOR ORGANIC EL ELEMENTS AND METHOD FOR PRODUCING SAME, ORGANIC EL ELEMENT, AND POLYMER JSR株式会社 2024-05-16 WO disclosed
CN-116449651-A Polyimide positive photoresist based on alkali deactivation mechanism 潍坊星泰克微电子材料有限公司 2023-07-18 CN disclosed
US-11681222-B2 Fluorine-containing polymer, purification method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2023-06-20 US disclosed
CN-114815506-A Polyimide positive photoresist based on alkali deactivation mechanism 潍坊星泰克微电子材料有限公司 2022-07-29 CN disclosed
CN-114651212-A Positive photosensitive material 默克专利股份有限公司 2022-06-21 CN disclosed
US-20220137508-A9 FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2022-05-05 US disclosed
EP-1162506-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-12 EP disclosed
US-6242161-B1 ABSORPTION COATINGS USING COPOLYMERS JSR CORPORATION (JP) 2001-06-05 US disclosed
EP-1085379-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-03-21 EP disclosed
US-6180316-B1 SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS JSR CORPORATION (JP) 2001-01-30 US disclosed
EP-1048983-A1 Radiation sensitive resin composition JSR Corporation (JP) 2000-11-02 EP disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed
EP-0930541-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-07-21 EP disclosed
EP-0789278-A2 Radiation-sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1997-08-13 EP disclosed