Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GSK3B | P49841 | 1/20 | 0.60 |
| ▸ | CASP3 | P42574 | 4/20 | 0.57 |
| ▸ | CASP7 | P55210 | 2/20 | 0.57 |
| ▸ | CASP6 | P55212 | 2/20 | 0.57 |
| ▸ | CASP8 | Q14790 | 2/20 | 0.57 |
| ▸ | CASP2 | P42575 | 1/20 | 0.57 |
| ▸ | PARP1 | P09874 | 2/20 | 0.41 |
| ▸ | MAOA | P21397 | 3/20 | 0.41 |
| ▸ | MAOB | P27338 | 3/20 | 0.41 |
| ▸ | PDGFRA | P16234 | 1/20 | 0.41 |
| ▸ | FER | P16591 | 1/20 | 0.41 |
| ▸ | LTK | P29376 | 1/20 | 0.41 |
| ▸ | CDK8 | P49336 | 1/20 | 0.41 |
| ▸ | ACVR1 | Q04771 | 1/20 | 0.41 |
| ▸ | LRRK2 | Q5S007 | 1/20 | 0.41 |
| ▸ | DYRK1B | Q9Y463 | 1/20 | 0.41 |
| ▸ | CES1 | P23141 | 1/20 | 0.41 |
| ▸ | LMNA | P02545 | 2/20 | 0.40 |
| ▸ | MEN1 | O00255 | 2/20 | 0.40 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Phthalimide SCHEMBL31168291 | 1.00 | GSK3B (0.60) | GSK3BCASP3CASP7CASP6CASP8 | |
| Phthalimide SCHEMBL27660070 | 0.86 | GSK3B (0.62) | GSK3BCASP3CASP7CASP6CASP8 | |
| Phthalimide SCHEMBL3220884 | 0.85 | GSK3B (0.68) | GSK3BCASP3CASP7CASP6CASP8 | |
| Phthalimide SCHEMBL29217853 | 0.85 | GSK3B (0.75) | GSK3BCASP3CASP7CASP6CASP8 | |
| Phthalimide SCHEMBL27968411 | 0.85 | GSK3B (0.75) | GSK3BCASP3CASP7CASP6CASP8 | |
| Trifluoromethanesulfonic Acid SCHEMBL515455 | 0.84 | PARP1 (0.67) | GSK3BCASP3CASP7CASP6CASP8 | |
| Phthalimide SCHEMBL3702796 | 0.83 | GSK3B (0.48) | GSK3BCASP3CASP7CASP6CASP8 | |
| Trifluoromethanesulfonic Acid SCHEMBL1026933 | 0.83 | MAOA (0.47) | GSK3BCASP3CASP7CASP6CASP8 | |
| Phthalimide SCHEMBL3700966 | 0.81 | GSK3B (0.47) | GSK3BCASP3CASP7CASP6CASP8 | |
| Trifluoromethanesulfonic Acid SCHEMBL27913668 | 0.81 | MAOA (0.46) | GSK3BCASP3CASP7CASP6CASP8 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 123 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6566036-B2 | Comprising polyhydroxystyrene protected by 1-ethoxyethanol, photosensitive acid generator, solvent and polystyrene filler; dimensional and shape control of semiconductors; responsive to design rule of <0.15mu m; miniaturization | NEC ELECTRONICS CORPORATION (JP) | 2003-05-20 | — | — | US | claimed |
| CN-1093645-C | Photoresist material and method for producing semiconductor constituted of corrosion resist picture thereof | NEC CORP (JP) | 2002-10-30 | — | — | CN | claimed |
| US-20010009749-A1 | Chemically amplified resist | NEC CORPORATION | 2001-07-26 | — | — | US | claimed |
| US-6096478-A | Resist material for forming a chemically amplified negative type resist pattern and method of manufacturing a semiconductor device employing the resist pattern | NEC CORPORATION (JP) | 2000-08-01 | — | — | US | claimed |
| CN-1227355-A | Photoresist material and method for producing semiconductor constituted of corrosion resist picture thereof | NEC CORP (JP) | 1999-09-01 | — | — | CN | claimed |
| US-5498765-A | Positive photoresist composition containing photoacid generator and use thereof | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1996-03-12 | — | — | US | claimed |
| US-5374500-A | Positive photoresist composition containing photoacid generator and use thereof | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1994-12-20 | — | — | US | claimed |
| EP-0619522-A2 | Positive photoresist composition containing photoacid generator and use thereof | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1994-10-12 | — | — | EP | claimed |
| WO-2026097702-A1 | PHOTOSENSITIVE COMPOSITION, METHOD FOR PREPARING PATTERN, CURED PRODUCT, AND ELECTRONIC COMPONENT | 江苏艾森半导体材料股份有限公司 | 2026-05-15 | — | — | WO | disclosed |
| US-20240427245-A1 | PHOTOSENSITIVE RESIN AND PHOTORESIST COMPOSITION CONTAINING THE SAME | TAKOMA TECHNOLOGY CO., LTD. (KR) | 2024-12-26 | — | — | US | disclosed |
| CN-118786388-A | Photosensitive resin and photoresist composition comprising the same | 塔科马科技有限公司 | 2024-10-15 | — | — | CN | disclosed |
| WO-2024122681-A1 | PHOTOSENSITIVE RESIN AND PHOTORESIST COMPOSITION COMPRISING SAME | 타코마테크놀러스 주식회사 | 2024-06-13 | — | — | WO | disclosed |
| CN-118103774-A | Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, and pattern forming method | 信越化学工业株式会社 | 2024-05-28 | — | — | CN | disclosed |
| CN-113527101-B | Novel compound, polymer, process for producing the same, photosensitive resin composition, pattern forming process, cured film, and electronic component | 信越化学工业株式会社 | 2024-04-23 | — | — | CN | disclosed |
| CN-1227355-A | Photoresist material and method for producing semiconductor constituted of corrosion resist picture thereof | NEC CORP (JP) | 1999-09-01 | — | — | CN | disclosed |
| EP-0718644-A2 | Production process of color filter | CANON KABUSHIKI KAISHA (JP) | 1996-06-26 | — | — | EP | disclosed |
| US-5498765-A | Positive photoresist composition containing photoacid generator and use thereof | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1996-03-12 | — | — | US | disclosed |
| US-5374500-A | Positive photoresist composition containing photoacid generator and use thereof | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1994-12-20 | — | — | US | disclosed |
| EP-0619522-A2 | Positive photoresist composition containing photoacid generator and use thereof | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1994-10-12 | — | — | EP | disclosed |
| US-5272042-A | Positive photoresist system for near-UV to visible imaging | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1993-12-21 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20240427245-A1 | PHOTOSENSITIVE RESIN AND PHOTORESIST COMPOSITION CONTAINING THE SAME | LCP1, TERB1, EED | GSK3B 4786/4885CASP3 3048/4885CASP7 2961/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.