SCHEMBL515682

SCHEMBL515682

[Al].[La].[Si]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29686271 0.87
SCHEMBL11006141 0.82
SCHEMBL1257067 0.82
SCHEMBL8354128 0.82
SCHEMBL8354134 0.82
SCHEMBL4185809 0.82
SCHEMBL1135067 0.82
SCHEMBL1257064 0.82
SCHEMBL239980 0.82
SCHEMBL4199518 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111003946-B Preparation method of glass/gadolinium gallium aluminum garnet composite material 福建省长汀金龙稀土有限公司 2022-06-24 CN claimed
CN-111003946-A Preparation method of glass/gadolinium gallium aluminum garnet composite material 福建省长汀金龙稀土有限公司 2020-04-14 CN claimed
CN-218300556-U White light source based on high-luminous-flux laser 京瓷SLD激光公司(US) 2023-01-13 CN disclosed
CN-217178318-U White light source based on high-luminous-flux laser 京瓷SLD激光公司 2022-08-12 CN disclosed
CN-111003946-B Preparation method of glass/gadolinium gallium aluminum garnet composite material 福建省长汀金龙稀土有限公司 2022-06-24 CN disclosed
CN-111003946-B Preparation method of glass/gadolinium gallium aluminum garnet composite material 福建省长汀金龙稀土有限公司 2022-06-24 CN disclosed
CN-111003946-A Preparation method of glass/gadolinium gallium aluminum garnet composite material 福建省长汀金龙稀土有限公司 2020-04-14 CN disclosed
CN-111003946-A Preparation method of glass/gadolinium gallium aluminum garnet composite material 福建省长汀金龙稀土有限公司 2020-04-14 CN disclosed
US-8482053-B2 Nonvolatile semiconductor memory device with high-K insulating film KABUSHIKI KAISHA TOSHIBA (JP) 2013-07-09 US disclosed
US-20120025297-A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME KABUSHIKI KAISHA TOSHIBA (JP) 2012-02-02 US disclosed