SCHEMBL515891

SCHEMBL515891

C=CC[GeH2][SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14482736 0.67
SCHEMBL3710848 0.61
Hydrochloric Acid SCHEMBL4659829 0.61
SCHEMBL7914735 0.61 TSHR (0.36)
SCHEMBL8041775 0.58
SCHEMBL65419 0.56
Water SCHEMBL11794362 0.53
Fluoride SCHEMBL3973518 0.53
Bromide SCHEMBL2123205 0.53
Ammonia Solution, Strong SCHEMBL9578676 0.53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10833263-B2 Current compliance layers and memory arrays comprising thereof INTERMOLECULAR, INC. (US) 2020-11-10 US disclosed
US-20200152867-A1 Current Compliance Layers and Memory Arrays Comprising Thereof INTERMOLECULAR, INC. 2020-05-14 US disclosed
US-10580978-B2 Current compliance layers and memory arrays comprising thereof INTERMOLECULAR, INC. (US) 2020-03-03 US disclosed
US-20180198064-A1 Current Compliance Layers and Memory Arrays Comprising Thereof INTERMOLECULAR, INC. (US) 2018-07-12 US disclosed
US-9065048-B2 Methods of forming germanium-antimony-tellurium materials and chalcogenide materials MICRON TECHNOLOGY, INC. (US) 2015-06-23 US disclosed
US-20140242748-A1 METHODS OF FORMING GERMANIUM-ANTIMONY-TELLURIUM MATERIALS AND CHALCOGENIDE MATERIALS MICRON TECHNOLOGY, INC. (US) 2014-08-28 US disclosed
US-8759146-B2 Methods of forming germanium-antimony-tellurium materials and methods of forming a semiconductor device structure including the same MICRON TECHNOLOGY, INC. (US) 2014-06-24 US disclosed
US-20120171812-A1 METHODS OF FORMING GERMANIUM-ANTIMONY-TELLURIUM MATERIALS AND METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE INCLUDING THE SAME MICRON TECHNOLOGY, INC. (US) 2012-07-05 US disclosed
US-8148197-B2 Methods of forming germanium-antimony-tellurium materials and a method of forming a semiconductor device structure including the same MICRON TECHNOLOGY, INC. (US) 2012-04-03 US disclosed
US-20120028410-A1 METHODS OF FORMING GERMANIUM-ANTIMONY-TELLURIUM MATERIALS AND A METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE INCLUDING THE SAME MICRON TECHNOLOGY, INC. (US) 2012-02-02 US disclosed