SCHEMBL5159336

SCHEMBL5159336

CCCCc1cc(C(=O)O)c(C(=O)O)cc1-c1cc(C(=O)O)c(C(=O)O)cc1CCCC

nearest known ligand 0.53

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GABRP O00591 2/20 0.53
GABRD O14764 2/20 0.53
GABRA1 P14867 2/20 0.53
GABRB1 P18505 2/20 0.53
GABRG2 P18507 2/20 0.53
GABRB3 P28472 2/20 0.53
GABRA5 P31644 2/20 0.53
GABRA3 P34903 2/20 0.53
GABRA2 P47869 2/20 0.53
GABRB2 P47870 2/20 0.53
GABRA4 P48169 2/20 0.53
GABRE P78334 2/20 0.53
GABRA6 Q16445 2/20 0.53
GABRG1 Q8N1C3 2/20 0.53
GABRG3 Q99928 2/20 0.53
GABRQ Q9UN88 2/20 0.53
KAT8 Q9H7Z6 4/20 0.42
PPARA Q07869 3/20 0.42
HCAR3 P49019 1/20 0.41
HCAR2 Q8TDS4 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11703415 0.90 GABRP (0.57) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL5154187 0.88 PTPN1 (0.46) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL14199723 0.86 GABRP (0.58) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL4633468 0.86 GABRP (0.62) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL10626153 0.82 KAT8 (0.56) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL29077090 0.81 GABRP (0.50) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL5154636 0.81 GABRP (0.46) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL11079329 0.81 GABRP (0.57) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL11593709 0.79 KAT8 (0.53) GABRPGABRDGABRA1GABRB1GABRG2
SCHEMBL11800974 0.78 KAT8 (0.56) GABRPGABRDGABRA1GABRB1GABRG2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1013650-B1 Tetracarboxylic dianhydride, derivative and production thereof, polyimide precursor, polyimide, resin composition, photosensitive resin composition, method of forming relief pattern, and electronic part HITACHI CHEM DUPONT MICROSYS (JP) 2007-01-24 EP disclosed
US-6600053-B2 Useful for producing polyimide precursors or polyimides having low thermal expansion and low residual stress HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2003-07-29 US disclosed
US-20020037991-A1 Photosensitive resin composition HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2002-03-28 US disclosed
US-6329494-B1 HIGH-SPEED DEVELOPABILITY, HIGH RESOLUTION AND GOOD DIMENSIONAL ACCURACY TO SUIT THEM TO THE PRODUCTION OF INTERLAYER INSULATING FILMS OR SURFACE-PROTECTING FILMS IN SEMICONDUCTOR DEVICES HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2001-12-11 US disclosed
EP-1013650-A2 Tetracarboxylic dianhydride, derivative and production thereof, polyimide precursor, polyimide, resin composition, photosensitive resin composition, method of forming relief pattern, and electronic part Hitachi Chemical DuPont MicroSystems Ltd. (JP) 2000-06-28 EP disclosed