SCHEMBL5160469

SCHEMBL5160469

CC(C)c1cc(C(=O)O)c(C(=O)O)cc1-c1cc(C(=O)O)c(C(=O)O)cc1C(C)C

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
FABP3 P05413 1/20 0.47
FABP4 P15090 1/20 0.47
ACE2 Q9BYF1 1/20 0.44
ALDH1A1 P00352 3/20 0.42
BCL2 P10415 2/20 0.41
MCL1 Q07820 1/20 0.41
MAPT P10636 2/20 0.40
TSHR P16473 2/20 0.40
HSD17B10 Q99714 2/20 0.40
HPGD P15428 2/20 0.40
POLB P06746 1/20 0.40
LCK P06239 1/20 0.39
FYN P06241 1/20 0.39
MEN1 O00255 1/20 0.37
KMT2A Q03164 1/20 0.37
NPSR1 Q6W5P4 1/20 0.37
NOTUM Q6P988 1/20 0.36
GABRA1 P14867 1/20 0.36
GABRB1 P18505 1/20 0.36
EIF4A3 P38919 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21019461 0.84 FABP3 (0.48) FABP3FABP4ACE2ALDH1A1BCL2
SCHEMBL18309202 0.83 FABP3 (0.52) FABP3FABP4ACE2ALDH1A1BCL2
SCHEMBL29077088 0.78 FABP3 (0.44) FABP3FABP4ACE2ALDH1A1BCL2
SCHEMBL23879428 0.77 FABP3 (0.42) FABP3FABP4ACE2ALDH1A1BCL2
SCHEMBL18309199 0.76 FABP3 (0.50) FABP3FABP4ACE2ALDH1A1BCL2
SCHEMBL18309171 0.76 FABP3 (0.45) FABP3FABP4ACE2ALDH1A1BCL2
SCHEMBL29924059 0.74 HSP90AA1 (0.53) FABP3FABP4ACE2ALDH1A1BCL2
SCHEMBL28916218 0.74 FABP3 (0.44) FABP3FABP4ACE2ALDH1A1BCL2
SCHEMBL13049116 0.74 ACE2 (0.46) FABP3FABP4ACE2ALDH1A1BCL2
SCHEMBL18677495 0.74 HSP90AA1 (0.53) FABP3FABP4ACE2ALDH1A1BCL2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1013650-B1 Tetracarboxylic dianhydride, derivative and production thereof, polyimide precursor, polyimide, resin composition, photosensitive resin composition, method of forming relief pattern, and electronic part HITACHI CHEM DUPONT MICROSYS (JP) 2007-01-24 EP disclosed
US-6600053-B2 Useful for producing polyimide precursors or polyimides having low thermal expansion and low residual stress HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2003-07-29 US disclosed
US-20020037991-A1 Photosensitive resin composition HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2002-03-28 US disclosed
US-6329494-B1 HIGH-SPEED DEVELOPABILITY, HIGH RESOLUTION AND GOOD DIMENSIONAL ACCURACY TO SUIT THEM TO THE PRODUCTION OF INTERLAYER INSULATING FILMS OR SURFACE-PROTECTING FILMS IN SEMICONDUCTOR DEVICES HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2001-12-11 US disclosed
EP-1013650-A2 Tetracarboxylic dianhydride, derivative and production thereof, polyimide precursor, polyimide, resin composition, photosensitive resin composition, method of forming relief pattern, and electronic part Hitachi Chemical DuPont MicroSystems Ltd. (JP) 2000-06-28 EP disclosed