SCHEMBL516191

SCHEMBL516191

C=CC([SiH3])[Te]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28981335 0.67
SCHEMBL367609 0.67
SCHEMBL68491 0.64
SCHEMBL3297998 0.64
SCHEMBL10340297 0.64
SCHEMBL3094040 0.64
SCHEMBL175049 0.64
SCHEMBL175774 0.64
SCHEMBL10384753 0.64
SCHEMBL8814616 0.64

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 44 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20130210217-A1 Precursors for GST Films in ALD/CVD Processes AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-08-15 US claimed
US-10833263-B2 Current compliance layers and memory arrays comprising thereof INTERMOLECULAR, INC. (US) 2020-11-10 US disclosed
US-20200152867-A1 Current Compliance Layers and Memory Arrays Comprising Thereof INTERMOLECULAR, INC. 2020-05-14 US disclosed
US-10580978-B2 Current compliance layers and memory arrays comprising thereof INTERMOLECULAR, INC. (US) 2020-03-03 US disclosed
EP-2130942-B1 Method for making binary and ternary metal chalcogenide materials VERSUM MAT US LLC (US) 2018-12-26 EP disclosed
EP-2698373-B1 Precursors for gst films in ald/cvd processes VERSUM MAT US LLC (US) 2018-09-19 EP disclosed
US-20180198064-A1 Current Compliance Layers and Memory Arrays Comprising Thereof INTERMOLECULAR, INC. (US) 2018-07-12 US disclosed
EP-3293193-A2 PRECURSORS FOR GST FILMS IN ALD/CVD PROCESSES Versum Materials US, LLC (US) 2018-03-14 EP disclosed
EP-2394748-B1 Method of making a multicomponent film AIR PROD & CHEM (US) 2017-03-29 EP disclosed
EP-2532767-B1 Process for making a ternary metal chalcogenide film, AIR PROD & CHEM (US) 2017-03-15 EP disclosed
US-20120034767-A1 Method of Making a Multicomponent Film AIR PRODUCTS AND CHEMICALS, INC. (US) 2012-02-09 US disclosed
US-20120028410-A1 METHODS OF FORMING GERMANIUM-ANTIMONY-TELLURIUM MATERIALS AND A METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE INCLUDING THE SAME MICRON TECHNOLOGY, INC. (US) 2012-02-02 US disclosed
EP-2067876-B1 ALD or CVD process for producing germanium-antimony-tellurium films AIR PROD & CHEM (US) 2011-09-21 EP disclosed
US-7960205-B2 Tellurium precursors for GST films in an ALD or CVD process AIR PRODUCTS AND CHEMICALS, INC. (US) 2011-06-14 US disclosed
EP-2130942-A2 Binary and ternary metal chalcogenide materials and method of making the same Air Products and Chemicals, Inc. (US) 2009-12-09 EP disclosed
US-20090280052-A1 Binary and Ternary Metal Chalcogenide Materials and Method of Making and Using Same AIR PRODUCTS AND CHEMICALS, INC. (US) 2009-11-12 US disclosed
US-20090191330-A1 Antimony Precursors for GST Films in ALD/CVD Processes AIR PRODUCTS AND CHEMICALS, INC. (US) 2009-07-30 US disclosed
EP-2083096-A1 Antimony precursors for GST Films In ALD/CVD processes Air Products and Chemicals, Inc. (US) 2009-07-29 EP disclosed
EP-2067876-A2 ALD or CVD process for producing germanium-antimony-tellurium films Air Products and Chemicals, Inc. (US) 2009-06-10 EP disclosed
US-20090137100-A1 Tellurium Precursors for GST Films in an ALD or CVD Process AIR PRODUCTS AND CHEMICALS, INC. (US) 2009-05-28 US disclosed