SCHEMBL521830

SCHEMBL521830

CCCN[SiH](NCCC)NCCC

nearest known ligand 0.33

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
ADH1B P00325 1/20 0.33
ADH1A P07327 1/20 0.33
ADH7 P40394 1/20 0.33
CA1 P00915 1/20 0.33
ALDH1A1 P00352 1/20 0.30
TSHR P16473 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27336222 0.90 TSHR (0.30) TSHR
SCHEMBL15309954 0.74
SCHEMBL10024700 0.72 ADH1B (0.30) ADH1BADH1AADH7CA1
SCHEMBL14813076 0.72
SCHEMBL15309823 0.72
SCHEMBL23282559 0.72
SCHEMBL31302741 0.72
SCHEMBL5015144 0.67
SCHEMBL3469806 0.67
SCHEMBL180627 0.67 TP53 (0.36)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 190 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250313953-A1 METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS ASM IP HOLDING B.V. (NL) 2025-10-09 US claimed
US-20250305131-A1 LOW TEMPERATURE THERMAL DEPOSITION OF SILICON-CONTAINING FILMS USING LOW WATER CONTENT HYDROGEN PEROXIDE GELEST, INC. 2025-10-02 US claimed
US-20250270698-A1 BORON-CONTAINING PRECURSORS FOR THE ALD DEPOSITION OF BORON NITRIDE FILMS VERSUM MATERIALS US, LLC 2025-08-28 US claimed
US-12378667-B2 Methods and systems for forming doped silicon nitride films ASM IP HOLDING B.V. (NL) 2025-08-05 US claimed
EP-4493734-A1 BORON-CONTAINING PRECURSORS FOR THE ALD DEPOSITION OF BORON NITRIDE FILMS Versum Materials US, LLC (US) 2025-01-22 EP claimed
US-20230407477-A1 SUBSTRATE PROCESSING APPARATUS INCLUDING IMPROVED EXHAUST STRUCTURE ASM IP HOLDING B.V. (NL) 2023-12-21 US claimed
WO-2023201271-A1 BORON-CONTAINING PRECURSORS FOR THE ALD DEPOSITION OF BORON NITRIDE FILMS VERSUM MATERIALS US, LLC (US) 2023-10-19 WO claimed
EP-3663301-B1 BORON-CONTAINING COMPOUNDS, COMPOSITIONS, AND METHODS FOR THE DEPOSITION OF BORON CONTAINING FILMS VERSUM MAT US LLC (US) 2023-08-30 EP claimed
US-20230126516-A1 METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS ASM IP HOLDING B.V. (NL) 2023-04-27 US claimed
CN-115536687-B Process for preparing trialkylaminosilanes and use thereof 江苏南大光电材料股份有限公司 2023-04-11 CN claimed
US-20100009546-A1 Aminosilanes for Shallow Trench Isolation Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2010-01-14 US claimed
EP-2144279-A2 Aminosilanes for shallow trench isolation films Air Products and Chemicals, Inc. (US) 2010-01-13 EP claimed
US-7531452-B2 Strained metal silicon nitride films and method of forming TOKYO ELECTRON LIMITED (JP) 2009-05-12 US claimed
US-7494937-B2 Strained metal silicon nitride films and method of forming TOKYO ELECTRON LIMITED (JP) 2009-02-24 US claimed
WO-2008121463-A1 METHOD FOR FORMING STRAINED SILICON NITRIDE FILMS AND A DEVICE CONTAINING SUCH FILMS TOKYO ELECTRON LIMITED (JP) 2008-10-09 WO claimed
US-20080242116-A1 Method for forming strained silicon nitride films and a device containing such films TOKYO ELECTRON LIMITED (JP) 2008-10-02 US claimed
US-20080241388-A1 Strained metal silicon nitride films and method of forming TOKYO ELECTRON LIMITED (JP) 2008-10-02 US claimed
US-20080242077-A1 Strained metal silicon nitride films and method of forming TOKYO ELECTRON LIMITED (JP) 2008-10-02 US claimed
US-20080081470-A1 Method for forming strained silicon nitride films and a device containing such films TOKYO ELECTRON LIMITED (JP) 2008-04-03 US claimed
US-20060062917-A1 Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane APPLIED MATERIALS, INC. 2006-03-23 US claimed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20250270698-A1 BORON-CONTAINING PRECURSORS FOR THE ALD DEPOSITION OF BORON NITRIDE FILMS AKR1C3, NR1I3, AKR1C2 ADH1B 235/4885ADH1A 39/4885ADH7 571/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.