⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8348178 | 0.87 | — | — | |
| SCHEMBL11133698 | 0.58 | — | — | |
| SCHEMBL5669338 | 0.58 | — | — | |
| SCHEMBL3295 | 0.58 | — | — | |
| SCHEMBL465227 | 0.58 | — | — | |
| SCHEMBL10632871 | 0.58 | — | — | |
| SCHEMBL4352631 | 0.58 | — | — | |
| SCHEMBL8089227 | 0.58 | — | — | |
| SCHEMBL8390528 | 0.58 | — | — | |
| SCHEMBL131680 | 0.58 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-113913778-B | Online surface coating siliconized wall treatment method for fusion device | 核工业西南物理研究院 | 2023-09-08 | — | — | CN | claimed |
| CN-113913778-A | Online surface coating silicification wall processing method for fusion device | 核工业西南物理研究院 | 2022-01-11 | — | — | CN | claimed |
| CN-101469063-A | Organosilicon polyimide-polyurea basic polymer, elastomer prepared therefrom, preparation and use thereof | HENKEL AG & CO KGAA (DE) | 2009-07-01 | — | — | CN | claimed |
| CN-1630036-A | Semiconductor element and method of manufacturing the same | MACRONIX INT CO LTD (CN) | 2005-06-22 | — | — | CN | claimed |
| US-11996489-B2 | Optical module and method for manufacturing the same | NIPPON TELEGRAPH AND TELEPHONE CORPORATION (JP) | 2024-05-28 | — | — | US | disclosed |
| CN-113913778-B | Online surface coating siliconized wall treatment method for fusion device | 核工业西南物理研究院 | 2023-09-08 | — | — | CN | disclosed |
| CN-113913778-B | Online surface coating siliconized wall treatment method for fusion device | 核工业西南物理研究院 | 2023-09-08 | — | — | CN | disclosed |
| CN-114805002-B | Method for reducing aromatic olefin, aldehyde or ketone by reduction or deuteration | 遵义医科大学 | 2023-08-22 | — | — | CN | disclosed |
| US-20220085576-A1 | Tunable Laser | NIPPON TELEGRAPH AND TELEPHONE CORPORATION (JP) | 2022-03-17 | — | — | US | disclosed |
| CN-113913778-A | Online surface coating silicification wall processing method for fusion device | 核工业西南物理研究院 | 2022-01-11 | — | — | CN | disclosed |
| CN-113913778-A | Online surface coating silicification wall processing method for fusion device | 核工业西南物理研究院 | 2022-01-11 | — | — | CN | disclosed |
| US-20210175685-A1 | Semiconductor Optical Element | NIPPON TELEGRAPH AND TELEPHONE CORPORATION (JP) | 2021-06-10 | — | — | US | disclosed |
| CN-101523613-B | Deuterated film packaging structure of nonvolatile charge-trapping memory device | CYPRESS SEMICONDUCTOR CORP | 2012-05-30 | — | — | CN | disclosed |
| CN-101636845-A | Nonvolatile charge trap memory device with deuterated layers in multi-layer charge-trapping region | CYPRESS SEMICONDUCTOR CORP | 2010-01-27 | — | — | CN | disclosed |
| CN-101523613-A | Deuterated film packaging structure of nonvolatile charge-trapping memory device | CYPRESS SEMICONDUCTOR CORP (US) | 2009-09-02 | — | — | CN | disclosed |
| CN-101469063-A | Organosilicon polyimide-polyurea basic polymer, elastomer prepared therefrom, preparation and use thereof | HENKEL AG & CO KGAA (DE) | 2009-07-01 | — | — | CN | disclosed |
| EP-1173505-B1 | SILICONE COMPOSITION USED IN THE PRODUCTION OF ANTIFRICTION VARNISHES, METHOD FOR THE APPLICATION OF SAID VARNISHES TO A SUPPORT AND SUPPORT THUS TREATED | RHODIA CHIMIE SA (FR) | 2007-10-17 | — | — | EP | disclosed |
| CN-1630036-A | Semiconductor element and method of manufacturing the same | MACRONIX INT CO LTD (CN) | 2005-06-22 | — | — | CN | disclosed |
| US-6661065-B2 | Semiconductor device and SOI substrate | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 2003-12-09 | — | — | US | disclosed |
| US-20020047169-A1 | Semiconductor device and SOI substrate | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 2002-04-25 | — | — | US | disclosed |