⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1628941 | 0.90 | — | — | |
| SCHEMBL7648397 | 0.84 | — | — | |
| SCHEMBL6885000 | 0.84 | — | — | |
| SCHEMBL5848287 | 0.82 | — | — | |
| SCHEMBL6879345 | 0.80 | — | — | |
| Carbon Monoxide SCHEMBL4024246 | 0.79 | — | — | |
| SCHEMBL5848919 | 0.79 | — | — | |
| SCHEMBL2416824 | 0.78 | — | — | |
| SCHEMBL3080501 | 0.77 | — | — | |
| SCHEMBL4023345 | 0.76 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1036 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12612703-B2 | Method for providing a substrate for an electrochemical cell with a catalytic material | NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO (NL) | 2026-04-28 | — | — | US | claimed |
| US-20260036897-A1 | REPAIR PROCESS FOR CLEAR DEFECTS ON EUV PSM MASKS | ZEISS CARL SMT GMBH (DE) | 2026-02-05 | — | — | US | claimed |
| US-20250233015-A1 | METHODS OF MANUFACTURING INTERCONNECT STRUCTURES | APPLIED MATERIALS, INC. (US) | 2025-07-17 | — | — | US | claimed |
| US-12347726-B2 | Interconnect structures and methods of forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-07-01 | — | — | US | claimed |
| WO-2025061949-A2 | METHOD AND DEVICE FOR MASK REPAIR | CARL ZEISS SMT GMBH (DE) | 2025-03-27 | — | — | WO | claimed |
| US-12252452-B2 | Coatings on particles of high energy materials and methods of forming same | Forge Nano, Inc. (US) | 2025-03-18 | — | — | US | claimed |
| CN-116376552-B | Monoatomic electrochemiluminescence probe and preparation method and application thereof | 清华大学 | 2025-01-24 | — | — | CN | claimed |
| CN-119236924-A | Silk screen supported noble metal catalyst prepared by ALD method and application thereof in catalytic hydrogen combustion | 中国石油化工股份有限公司 | 2025-01-03 | — | — | CN | claimed |
| CN-119101254-A | COF composite material and preparation method and application thereof | 南昌大学 | 2024-12-10 | — | — | CN | claimed |
| US-20240387253-A1 | Interconnect Structures and Methods of Forming the Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-21 | — | — | US | claimed |
| US-6476247-B1 | Processes for the preparation of organoluthenium compounds useful for thin film formation by CVD | TANAKA KIKINZOKU KOGYO K.K. (JP) | 2002-11-05 | — | — | US | claimed |
| US-6440495-B1 | VAPOR DEPOSITING RUTHENIUM FILM ON SUBSTRATE USING LIQUID SOURCE CHEMICAL VAPOR DEPOSITION TECHNIQUE CONDUCTED AT SELECTED PROCESS CONDITIONS WHEREBY FILM IS DEPOSITED AT TEMPERATURE IN KINETICALLY LIMITED TEMPERATURE REGIME | APPLIED MATERIALS, INC. | 2002-08-27 | — | — | US | claimed |
| US-20020102826-A1 | Fabricating method of semiconductor integrated circuits | RENESAS ELECTRONICS CORPORATION (JP) | 2002-08-01 | — | — | US | claimed |
| US-20020086480-A1 | Method of manufacturing a capacitor in a semiconductor device | HYNIX SEMICONDUCTOR INC. (KR) | 2002-07-04 | — | — | US | claimed |
| US-20020074582-A1 | Semiconductor device and method of manufacturing thereof | HITACHI, LTD. (JP) | 2002-06-20 | — | — | US | claimed |
| EP-1178131-A1 | Chemical vapor deposition of ruthemium films | Applied Materials, Inc. (US) | 2002-02-06 | — | — | EP | claimed |
| US-20020004293-A1 | Method of growing electrical conductors | ASM INTERNATIONAL N.V. (NL) | 2002-01-10 | — | — | US | claimed |
| US-20010006838-A1 | Methods of forming ruthenium film by changing process conditions during chemical vapor deposition and ruthenium films formed thereby | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2001-07-05 | — | — | US | claimed |
| US-6207232-B1 | PRODUCING BIS(ETHYLCYCLOPENTADINEYL)RUTHENIUM CONTAINING LESS THAN ELEVEN PARTS PER MILLION METALLIC IMPURITIES BY REACTING RUTHENIUM CHLORIDE TRIHYDRATE AND ETHYL CYCLOPENTADIENE WITH ZINC POWDER IN ALCOHOL SOLVENT; VAPORIZING TO FORM FILM | KABUSHIKIKAISHA KOJUNDOKAGAKU KENKYUSHO (JP) | 2001-03-27 | — | — | US | claimed |
| US-6002036-A | REACTING RUTHENIUM TRICHLORIDE HYDRATE AND ETHYL- OR IOSPROPYLCYCLOPENTADIENE WITH A ZINC POWDER IN AN ALCOHOL SOLVENT | KABUSHIKIKAISHA KOJUNDOKAGAKU KENKYUSHO (JP) | 1999-12-14 | — | — | US | claimed |