SCHEMBL5344169

SCHEMBL5344169

[SiH3]N[SiH2][SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL345482 0.62
SCHEMBL18979384 0.62
SCHEMBL4424926 0.59
SCHEMBL1147812 0.59
SCHEMBL9343606 0.59
SCHEMBL29215581 0.59
SCHEMBL647384 0.59
SCHEMBL17046120 0.59
SCHEMBL22207749 0.56
Methane SCHEMBL4158420 0.56

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-114269761-B Novel silyl cyclodisilazane compound and method for producing silicon-containing film using same DNF有限公司 2024-12-10 CN disclosed
CN-114318292-A Method for coating flame-retardant film layer by chemical vapor deposition method 中储粮成都储藏研究院有限公司 2022-04-12 CN disclosed
US-7245010-B2 System and device including a barrier layer MICRON TECHNOLOGY, INC. (US) 2007-07-17 US disclosed
US-7095088-B2 System and device including a barrier layer MICRON TECHNOLOGY, INC. (US) 2006-08-22 US disclosed
US-20060175673-A1 System and device including a barrier layer POWELL DON C 2006-08-10 US disclosed
US-20050275044-A1 System and device including a barrier alayer MICRON TECHNOLOGY, INC. 2005-12-15 US disclosed
US-20040217476-A1 System and device including a barrier layer MICRON TECHNOLOGY, INC. 2004-11-04 US disclosed
US-6774443-B2 System and device including a barrier layer MICRON TECHNOLOGY, INC. 2004-08-10 US disclosed
US-6475883-B2 Method for forming a barrier layer MICRON TECHNOLOGY, INC. 2002-11-05 US disclosed
US-6410968-B1 Semiconductor device with barrier layer MICRON TECHNOLOGY, INC. 2002-06-25 US disclosed
US-20020060348-A1 System and device including a barrier layer MICRON SEMICONDUCTOR PRODUCTS, INC. 2002-05-23 US disclosed
US-20020025658-A1 Method for forming a barrier layer MICRON SEMICONDUCTOR PRODUCTS, INC. 2002-02-28 US disclosed
EP-0125772-B1 FIBER REINFORCED GLASS MATRIX COMPOSITES DOW CORNING CORPORATION (US) 1988-03-30 EP disclosed
US-4631346-A Silyl carbamates and their use in the preparation of bis (aminoalkyl) disiloxanes GENERAL ELECTRIC COMPANY (US) 1986-12-23 US disclosed
US-4565885-A OLEFINIC AMINE WITH A SILAZANE GENERAL ELECTRIC COMPANY (US) 1986-01-21 US disclosed
EP-0125772-A1 Fiber reinforced glass matrix composites DOW CORNING CORPORATION (US) 1984-11-21 EP disclosed
US-4460638-A IMPREGNATION HIGH MODULUS FIBERS WITH SILAZANE POLYMER DRYING, PRESSING, CURING AND FIRING DOW CORNING CORPORATION (US) 1984-07-17 US disclosed
US-4312970-A PYROLYSIS TO SILICON CARBIDE CERAMICS DOW CORNING CORPORATION (US) 1982-01-26 US disclosed