SCHEMBL5350371

SCHEMBL5350371

C=CO[SiH](OC=C)OCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Propene SCHEMBL4734549 0.77
Butadiene SCHEMBL17686472 0.77
SCHEMBL27833821 0.76
SCHEMBL28503941 0.74
Propene SCHEMBL28044215 0.74
SCHEMBL8418494 0.74
SCHEMBL7182769 0.74 TSHR (0.32)
Acrylic Acid SCHEMBL29234341 0.72 LMNA (0.48)
Acrylic Acid SCHEMBL31139542 0.72 LMNA (0.48)
Ethylene SCHEMBL28590172 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20040033445-A1 Method of forming a photoresist pattern and method for patterning a layer using a photoresist SAMSUNG ELECTRONICS CO., LTD. (KR) 2004-02-19 US claimed
US-7297466-B2 Method of forming a photoresist pattern and method for patterning a layer using a photoresist SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-11-20 US disclosed
US-20040033445-A1 Method of forming a photoresist pattern and method for patterning a layer using a photoresist SAMSUNG ELECTRONICS CO., LTD. (KR) 2004-02-19 US disclosed