Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA1 | P00915 | 1/20 | 0.51 |
| ▸ | CA2 | P00918 | 1/20 | 0.51 |
| ▸ | MMP1 | P03956 | 1/20 | 0.51 |
| ▸ | MMP2 | P08253 | 1/20 | 0.51 |
| ▸ | MMP9 | P14780 | 1/20 | 0.51 |
| ▸ | MMP8 | P22894 | 1/20 | 0.51 |
| ▸ | MMP13 | P45452 | 1/20 | 0.51 |
| ▸ | HTT | P42858 | 1/20 | 0.48 |
| ▸ | MEN1 | O00255 | 3/20 | 0.47 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.47 |
| ▸ | NR3C1 | P04150 | 1/20 | 0.47 |
| ▸ | PGR | P06401 | 1/20 | 0.47 |
| ▸ | AR | P10275 | 1/20 | 0.47 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.47 |
| ▸ | GAA | P10253 | 1/20 | 0.47 |
| ▸ | KAT6A | Q92794 | 1/20 | 0.46 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.44 |
| ▸ | SLC1A3 | P43003 | 1/20 | 0.43 |
| ▸ | SLC1A2 | P43004 | 1/20 | 0.43 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.43 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5400807 | 0.92 | FFAR1 (0.51) | CA1CA2MMP1MMP2MMP9 | |
| SCHEMBL5408432 | 0.92 | FFAR1 (0.51) | CA1CA2MMP1MMP2MMP9 | |
| SCHEMBL5415242 | 0.90 | CA1 (0.43) | CA1CA2MMP1MMP2MMP9 | |
| SCHEMBL5410156 | 0.89 | MAPT (0.46) | CA1CA2MMP1MMP2MMP9 | |
| SCHEMBL5082293 | 0.88 | CA1 (0.59) | CA1CA2MMP1MMP2MMP9 | |
| Silver SCHEMBL6114468 | 0.88 | CA1 (0.59) | CA1CA2MMP1MMP2MMP9 | |
| SCHEMBL5408783 | 0.88 | NPSR1 (0.44) | CA1CA2MMP1MMP2MMP9 | |
| SCHEMBL6282698 | 0.88 | POLB (0.43) | CA1CA2MMP1MMP2MMP9 | |
| SCHEMBL5398505 | 0.86 | FFAR1 (0.55) | CA1CA2MMP1MMP2MMP9 | |
| SCHEMBL5410115 | 0.86 | TRPV1 (0.43) | CA1CA2MMP1MMP2MMP9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7312014-B2 | Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray | WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) | 2007-12-25 | — | — | US | claimed |
| US-6949329-B2 | Pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-09-27 | — | — | US | claimed |
| US-20040170918-A1 | Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray | WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) | 2004-09-02 | — | — | US | claimed |
| EP-1406123-A1 | RESIST COMPOSITIONS | Wako Pure Chemical Industries, Ltd. (JP) | 2004-04-07 | — | — | EP | claimed |
| US-20030017425-A1 | Pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2003-01-23 | — | — | US | claimed |
| US-7312014-B2 | Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray | WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) | 2007-12-25 | — | — | US | disclosed |
| US-6949329-B2 | Pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-09-27 | — | — | US | disclosed |
| US-20040170918-A1 | Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray | WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) | 2004-09-02 | — | — | US | disclosed |
| EP-1406123-A1 | RESIST COMPOSITIONS | Wako Pure Chemical Industries, Ltd. (JP) | 2004-04-07 | — | — | EP | disclosed |
| US-20030017425-A1 | Pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2003-01-23 | — | — | US | disclosed |