SCHEMBL5405593

SCHEMBL5405593

C(=COC=CCC12CC3CC(CC(C3)C1)C2)CC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.41

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
GRIN2D O15399 4/20 0.41
GRIN3B O60391 4/20 0.41
GRIN1 Q05586 4/20 0.41
GRIN2A Q12879 4/20 0.41
GRIN2B Q13224 4/20 0.41
GRIN2C Q14957 4/20 0.41
GRIN3A Q8TCU5 4/20 0.41
CA12 O43570 2/20 0.34
CA1 P00915 2/20 0.34
CA2 P00918 2/20 0.34
CA9 Q16790 2/20 0.34
ALDH1A1 P00352 5/20 0.32
TSHR P16473 1/20 0.32
EPHX2 P34913 2/20 0.31
KDM4E B2RXH2 1/20 0.31
MEN1 O00255 1/20 0.30
KMT2A Q03164 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5665932 0.78 GRIN2D (0.47) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL5487969 0.78
SCHEMBL821157 0.74 GRIN2D (0.48) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL3875756 0.74 GRIN2D (0.42) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL18602703 0.74 GRIN2D (0.42) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
Hydrochloric Acid SCHEMBL28266156 0.73 GRIN2D (0.41) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL159995 0.69 GRIN2D (0.46) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL821936 0.69 GRIN2D (0.46) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL3656833 0.69 GRIN2D (0.46) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL9537877 0.69 GRIN2D (0.46) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7276323-B2 Photoresists, polymers and processes for microlithography E. I. DU PONT DE NEMOURS AND COMPANY (US) 2007-10-02 US disclosed
US-7166416-B2 Protecting groups in polymers, photoresists and processes for microlithography E. I. DU PONT DE NEMOURS AND COMPANY (US) 2007-01-23 US disclosed
US-20050191579-A1 Protecting groups in polymers, photoresists and processes for microlithography FEIRING ANDREW E (US) 2005-09-01 US disclosed
US-6899995-B2 Protecting groups in polymers, photoresists and processes for microlithography E.I. DU PONT DE NEMOURS AND COMPANY (US) 2005-05-31 US disclosed
US-6849377-B2 Photoresists, polymers and processes for microlithography E. I. DU PONT DE NEMOURS AND COMPANY (US) 2005-02-01 US disclosed
US-20040023157-A1 Protecting groups in polymers, photoresists and processes for microlithography E.I. DU PONT DE NEMOURS AND COMPANY 2004-02-05 US disclosed
EP-1340125-A2 PROTECTING GROUPS IN POLYMERS, PHOTORESISTS AND PROCESSES FOR MICROLITHOGRAPHY E.I. DU PONT DE NEMOURS AND COMPANY (US) 2003-09-03 EP disclosed
US-6593058-B1 Fluorine-containing copolymer contains sufficient functionality to render the photoresist developable so as to produce a relief image, following imagewise exposure to ultraviolet radiation E. I. DU PONT DE NEMOURS AND COMPANY 2003-07-15 US disclosed
WO-2002044845-A2 PROTECTING GROUPS IN POLYMERS, PHOTORESISTS AND PROCESSES FOR MICROLITHOGRAPHY E.I. DU PONT DE NEMOURS AND COMPANY (US) 2002-06-06 WO disclosed