SCHEMBL5406985

SCHEMBL5406985

CO[Si](CC(C[Si](OC)(OC)c1ccccc1)(C[Si](OC)(OC)c1ccccc1)C[Si](OC)(OC)c1ccccc1)(OC)c1ccccc1

nearest known ligand 0.32

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
KCNN4 O15554 1/20 0.32
CA4 P22748 1/20 0.32
ESR1 P03372 1/20 0.30
ESR2 Q92731 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29101846 0.85 MAPK1 (0.32) KCNN4CA4
SCHEMBL5423960 0.85 MAPK1 (0.32) KCNN4CA4
SCHEMBL645535 0.84 CA4 (0.36) CA4ESR1ESR2
SCHEMBL5419646 0.83 KCNN4 (0.31) KCNN4CA4
SCHEMBL5408273 0.82 KCNN4 (0.37) KCNN4
SCHEMBL5410141 0.80
SCHEMBL5415005 0.80 CA4 (0.33) CA4ESR1ESR2
SCHEMBL645566 0.79 CA4 (0.36) CA4ESR1ESR2
SCHEMBL5404835 0.79 CA4 (0.30) CA4
SCHEMBL13089272 0.78 ESR1 (0.34) CA4ESR1ESR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed