Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.48 |
| ▸ | HSD17B10 | Q99714 | 3/20 | 0.48 |
| ▸ | CYP1B1 | Q16678 | 2/20 | 0.48 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.48 |
| ▸ | CYP1A2 | P05177 | 4/20 | 0.46 |
| ▸ | HPGD | P15428 | 2/20 | 0.46 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.40 |
| ▸ | CYP2A6 | P11509 | 1/20 | 0.40 |
| ▸ | TSHR | P16473 | 1/20 | 0.40 |
| ▸ | HPRT1 | P00492 | 3/20 | 0.38 |
| ▸ | FYN | P06241 | 2/20 | 0.37 |
| ▸ | ACHE | P22303 | 2/20 | 0.37 |
| ▸ | AHR | P35869 | 2/20 | 0.37 |
| ▸ | ERBB2 | P04626 | 1/20 | 0.37 |
| ▸ | MAOA | P21397 | 1/20 | 0.37 |
| ▸ | PAX8 | Q06710 | 1/20 | 0.36 |
| ▸ | MAPT | P10636 | 2/20 | 0.33 |
| ▸ | CYP1A1 | P04798 | 1/20 | 0.33 |
| ▸ | NQO2 | P16083 | 1/20 | 0.33 |
| ▸ | CES1 | P23141 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4850615 | 0.95 | ALDH1A1 (0.55) | ALDH1A1HSD17B10CYP1B1HIF1ACYP1A2 | |
| SCHEMBL4846808 | 0.88 | ALDH1A1 (0.39) | ALDH1A1HSD17B10CYP1B1HIF1ACYP1A2 | |
| SCHEMBL29399101 | 0.86 | HSD17B10 (0.44) | ALDH1A1HSD17B10CYP1B1HIF1ACYP1A2 | |
| SCHEMBL2290546 | 0.86 | HSD17B10 (0.44) | ALDH1A1HSD17B10CYP1B1HIF1ACYP1A2 | |
| SCHEMBL30541938 | 0.84 | HPRT1 (0.52) | ALDH1A1HSD17B10CYP1B1HIF1ACYP1A2 | |
| SCHEMBL31497107 | 0.84 | HPRT1 (0.52) | ALDH1A1HSD17B10CYP1B1HIF1ACYP1A2 | |
| SCHEMBL30446008 | 0.84 | HPRT1 (0.52) | ALDH1A1HSD17B10CYP1B1HIF1ACYP1A2 | |
| SCHEMBL159626 | 0.84 | HPRT1 (0.52) | ALDH1A1HSD17B10CYP1B1HIF1ACYP1A2 | |
| SCHEMBL12475251 | 0.84 | HPRT1 (0.52) | ALDH1A1HSD17B10CYP1B1HIF1ACYP1A2 | |
| SCHEMBL31450268 | 0.84 | HSD17B10 (0.42) | ALDH1A1HSD17B10CYP1B1HIF1ACYP1A2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7163781-B2 | Process for producing a semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2007-01-16 | — | — | US | disclosed |
| US-7119156-B2 | Resist resin | KABUSHIKI KAISHA TOSHIBA (JP) | 2006-10-10 | — | — | US | disclosed |
| US-7070905-B2 | Pattern forming process | KABUSHIKI KAISHA TOSHIBA (JP) | 2006-07-04 | — | — | US | disclosed |
| US-7063932-B2 | Resist resin | KABUSHIKI KAISHA TOSHIBA (JP) | 2006-06-20 | — | — | US | disclosed |
| US-7029823-B2 | Resist composition | KABUSHIKI KAISHA TOSHIBA (JP) | 2006-04-18 | — | — | US | disclosed |
| US-20050048400-A1 | Resist resin | KABUSHIKI KAISHA TOSHIBA (JP) | 2005-03-03 | — | — | US | disclosed |
| US-20050037283-A1 | Resist resin | KABUSHIKI KAISHA TOSHIBA (JP) | 2005-02-17 | — | — | US | disclosed |
| US-20050037284-A1 | Polymer; radiation transparent pattern against short wavelengths and etching resistance; semiconductors | KABUSHIKI KAISHA TOSHIBA (JP) | 2005-02-17 | — | — | US | disclosed |
| US-20050031991-A1 | Process for producing a semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2005-02-10 | — | — | US | disclosed |
| US-20050031990-A1 | Pattern forming process | KABUSHIKI KAISHA TOSHIBA (JP) | 2005-02-10 | — | — | US | disclosed |
| US-20040043324-A1 | Resin useful for resist, resist composition and pattern forming process using the same | KABUSHIKI KAISHA TOSHIBA (JP) | 2004-03-04 | — | — | US | disclosed |
| US-6660450-B2 | Acrylic ester polymer having pendant adamantane rings with oxygenated substitution; ultraviolet light transparency; dry etching resistance | KABUSHIKI KAISHA TOSHIBA (JP) | 2003-12-09 | — | — | US | disclosed |
| US-20030149225-A1 | Resin useful for resist, resist composition and pattern forming process using the same | KABUSHIKI KAISHA TOSHIBA (JP) | 2003-08-07 | — | — | US | disclosed |
| US-6541597-B2 | Resist resin having in its structure a bridged bond containing aliphatic ring; pattern excellent in transparency against short wavelength light and dry-etching resistance can be formed by alkali development with high resolution. | KABUSHIKI KAISHA TOSHIBA (JP) | 2003-04-01 | — | — | US | disclosed |
| US-20020098441-A1 | Resin useful for resist, resist composition and pattern forming process using the same | KABUSHIKI KAISHA TOSHIBA (JP) | 2002-07-25 | — | — | US | disclosed |
| US-6410748-B1 | Alicycli c group-containing monomer | KABUSHIKI KAISHA TOSHIBA (JP) | 2002-06-25 | — | — | US | disclosed |
| US-6303266-B1 | FOR PATTERN HAVING TRANSPARENCY AGAINST SHORT-WAVELENGTH LIGHT AND DRY-ETCHING RESISTANCE CAN BE FORMED BY ALKALI DEVELOPMENT WITH HIGH RESOLUTION | KABUSHIKI KAISHA TOSHIBA (JP) | 2001-10-16 | — | — | US | disclosed |
| US-6291129-B1 | LIGHT SENSITIVE ELEMENT WITH UNSATURATED POLYMERS | KABUSHIKI KAISHA TOSHIBA (JP) | 2001-09-18 | — | — | US | disclosed |
| US-6071670-A | PHOTORESIST RESIN COMPRISING PHOTOACID GENERATING COMPOUND AND AN ACID HYDROLYZABLE OLIGOMER HAVING ALICYCLIC OR POLYCONDENSED AROMATIC BACKBONE; ALKALI DEVELOPMENT WITH HIGH RESOLUTION, DRY ETCH RESISTANCE | KABUSHIKI KAISHA TOSHIBA (JP) | 2000-06-06 | — | — | US | disclosed |
| US-6060207-A | LOW IN ABSORPTION OF A LIGHT SOURCE OF SHORT WAVELENGTH AND EXCELLENT IN DRY ETCH RESISTANCE; COMPRISES A COMPOUND HAVING A TERPENOID SKELETON | KABUSHIKI KAISHA TOSHIBA (JP) | 2000-05-09 | — | — | US | disclosed |