SCHEMBL5415488

SCHEMBL5415488

CO[Si](CCCCC(CCCC[Si](OC)(OC)OC)(CCCC[Si](OC)(OC)OC)CCCC[Si](OC)(OC)OC)(OC)OC

nearest known ligand 0.38

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5414885 0.97 LMNA (0.41) LMNA
SCHEMBL5410146 0.97 LMNA (0.41) LMNA
SCHEMBL31487063 0.86 LMNA (0.50) LMNA
SCHEMBL314475 0.83 LMNA (0.46) LMNA
SCHEMBL5409977 0.82 LMNA (0.36) LMNA
SCHEMBL5413565 0.81 LMNA (0.33) LMNA
SCHEMBL28165821 0.81 LMNA (0.34) LMNA
SCHEMBL5419900 0.80 LMNA (0.32) LMNA
SCHEMBL5416153 0.80 LMNA (0.39) LMNA
SCHEMBL19532764 0.80 LMNA (0.39) LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed