SCHEMBL5417013

SCHEMBL5417013

CO[Si](CCCCCCC(CCCCCC[Si](OC)(OC)OC)(CCCCCC[Si](OC)(OC)OC)O[SiH3])(OC)OC

nearest known ligand 0.37

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5406994 1.00 LMNA (0.37) LMNA
SCHEMBL5410499 0.98 LMNA (0.34) LMNA
SCHEMBL5417104 0.93 LMNA (0.34) LMNA
SCHEMBL5410227 0.84
SCHEMBL5420071 0.81
SCHEMBL5410187 0.81
SCHEMBL5413505 0.80 LMNA (0.38) LMNA
SCHEMBL5417955 0.80 LMNA (0.38) LMNA
SCHEMBL5414885 0.79 LMNA (0.41) LMNA
SCHEMBL5410146 0.79 LMNA (0.41) LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed