SCHEMBL5419010

SCHEMBL5419010

C=CC[Si](CC(C)C)(OCC)OCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL437305 0.82 TSHR (0.30)
SCHEMBL4072028 0.82 TSHR (0.31)
SCHEMBL196449 0.79 LMNA (0.32)
SCHEMBL5398208 0.78 TSHR (0.30)
SCHEMBL2166852 0.78
SCHEMBL460981 0.76
SCHEMBL460982 0.76
SCHEMBL5833764 0.75
SCHEMBL5401229 0.74 TSHR (0.31)
SCHEMBL16496960 0.73

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7291567-B2 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2007-11-06 US disclosed
US-20060024980-A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2006-02-02 US disclosed
EP-1619226-A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR Corporation (JP) 2006-01-25 EP disclosed