SCHEMBL5423670

SCHEMBL5423670

COc1cccc([SiH2]C([SiH2]c2cccc(OC)c2OC)[SiH2]c2cccc(OC)c2OC)c1OC

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 1/20 0.44
CA12 O43570 1/20 0.41
CA1 P00915 1/20 0.41
CA2 P00918 1/20 0.41
CA4 P22748 1/20 0.41
CA7 P43166 1/20 0.41
CA9 Q16790 1/20 0.41
CA14 Q9ULX7 1/20 0.41
NFE2L2 Q16236 7/20 0.40
KDM4E B2RXH2 1/20 0.38
ALDH1A1 P00352 1/20 0.38
LMNA P02545 1/20 0.38
TP53 P04637 1/20 0.38
CYP3A4 P08684 1/20 0.38
MAPT P10636 1/20 0.38
HPGD P15428 1/20 0.38
ALOX15 P16050 1/20 0.38
ALOX12 P18054 1/20 0.38
MAPK1 P28482 1/20 0.38
HSD17B10 Q99714 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL645567 0.86 SMN1; SMN2 (0.42) SMN1; SMN2CA12CA1CA2CA4
SCHEMBL5409995 0.84 SMN1; SMN2 (0.38) SMN1; SMN2CA12CA1CA2CA4
SCHEMBL5412499 0.83 SMN1; SMN2 (0.44) SMN1; SMN2CA12CA1CA2CA4
SCHEMBL5415004 0.83 SMN1; SMN2 (0.37) SMN1; SMN2CA12CA1CA2CA4
SCHEMBL5420433 0.82 SMN1; SMN2 (0.39) SMN1; SMN2CA12CA1CA2CA4
SCHEMBL5414887 0.82 SMN1; SMN2 (0.39) SMN1; SMN2CA12CA1CA2CA4
SCHEMBL5425588 0.80 SMN1; SMN2 (0.35) SMN1; SMN2CA12CA1CA2CA4
SCHEMBL10499018 0.79 SMN1; SMN2 (0.47) SMN1; SMN2CA12CA1CA2CA4
SCHEMBL23530131 0.79 SMN1; SMN2 (0.41) SMN1; SMN2CA12CA1CA2CA14
SCHEMBL5349215 0.79 SMN1; SMN2 (0.37) SMN1; SMN2CA12CA1CA2CA4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed