SCHEMBL5409995

SCHEMBL5409995

COc1cccc([SiH2]C(C)C(C)(C(C)[SiH2]c2cccc(OC)c2OC)C(C)[SiH2]c2cccc(OC)c2OC)c1OC

nearest known ligand 0.41

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 1/20 0.38
NFE2L2 Q16236 8/20 0.37
CA12 O43570 1/20 0.34
CA1 P00915 1/20 0.34
CA2 P00918 1/20 0.34
CA4 P22748 1/20 0.34
CA7 P43166 1/20 0.34
CA9 Q16790 1/20 0.34
CA14 Q9ULX7 1/20 0.34
HDAC4 P56524 1/20 0.33
HDAC8 Q9BY41 1/20 0.33
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
ALDH1A1 P00352 1/20 0.33
GAA P10253 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5415004 0.85 SMN1; SMN2 (0.37) SMN1; SMN2NFE2L2CA12CA1CA2
SCHEMBL5423670 0.84 SMN1; SMN2 (0.44) SMN1; SMN2NFE2L2CA12CA1CA2
SCHEMBL5425588 0.83 SMN1; SMN2 (0.35) SMN1; SMN2NFE2L2CA12CA1CA2
SCHEMBL645567 0.82 SMN1; SMN2 (0.42) SMN1; SMN2NFE2L2CA12CA1CA2
SCHEMBL5405151 0.80 SMN1; SMN2 (0.39) SMN1; SMN2NFE2L2ALDH1A1GAA
SCHEMBL5412499 0.79 SMN1; SMN2 (0.44) SMN1; SMN2NFE2L2CA12CA1CA2
SCHEMBL5420433 0.78 SMN1; SMN2 (0.39) SMN1; SMN2NFE2L2CA12CA1CA2
SCHEMBL5414887 0.78 SMN1; SMN2 (0.39) SMN1; SMN2NFE2L2CA12CA1CA2
SCHEMBL5349215 0.75 SMN1; SMN2 (0.37) SMN1; SMN2NFE2L2CA12CA1CA2
SCHEMBL5419649 0.75 SMN1; SMN2 (0.41) SMN1; SMN2NFE2L2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed