SCHEMBL5425636

SCHEMBL5425636

CO[Si](CCCCCC(CCCCC[Si](OC)(OC)OC)CCCCC[Si](OC)(OC)OC)(OC)OC

nearest known ligand 0.41

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5412389 1.00 LMNA (0.41) LMNA
SCHEMBL5412508 0.97 LMNA (0.38) LMNA
SCHEMBL28465339 0.91 LMNA (0.53) LMNA
SCHEMBL5404765 0.90 LMNA (0.39) LMNA
SCHEMBL28127908 0.87 LMNA (0.45) LMNA
SCHEMBL5289024 0.87 LMNA (0.53) LMNA
SCHEMBL6009511 0.84 LMNA (0.50) LMNA
SCHEMBL20478198 0.84 LMNA (0.50) LMNA
SCHEMBL20478196 0.84 LMNA (0.50) LMNA
SCHEMBL3741069 0.84 LMNA (0.50) LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed