SCHEMBL5433795

SCHEMBL5433795

C=C(C)C(=O)OC(C)(C)C.CC(C)(C)c1ccc(C=CC=Cc2ccc(O)cc2)cc1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 1/20 0.44
LMNA P02545 3/20 0.42
TYR P14679 2/20 0.42
ESRRG P62508 2/20 0.41
APP P05067 1/20 0.41
MIF P14174 1/20 0.40
STAT3 P40763 1/20 0.39
ALDH1A1 P00352 3/20 0.38
MAPT P10636 3/20 0.38
KDM4E B2RXH2 2/20 0.38
CA12 O43570 1/20 0.37
CA1 P00915 1/20 0.37
CA2 P00918 1/20 0.37
CA7 P43166 1/20 0.37
CA9 Q16790 1/20 0.37
CA14 Q9ULX7 1/20 0.37
TRPV1 Q8NER1 4/20 0.36
NPC1 O15118 3/20 0.36
RAB9A P51151 3/20 0.36
SMN1; SMN2 Q16637 3/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5444011 0.90 ESRRG (0.41) CYP1A2LMNATYRESRRGMIF
SCHEMBL1506495 0.88 APP (0.42) TYRAPPMIFSTAT3ALDH1A1
SCHEMBL5438375 0.88 MAPT (0.44) TYRAPPMIFSTAT3ALDH1A1
SCHEMBL5450238 0.87 TRPV1 (0.41) CYP1A2LMNATYRESRRGAPP
SCHEMBL5453535 0.87 TRPV1 (0.41) CYP1A2LMNATYRESRRGAPP
SCHEMBL3325658 0.86 STAT3 (0.44) TYRAPPMIFSTAT3ALDH1A1
SCHEMBL5438976 0.85 KDM4E (0.41) LMNATYRESRRGAPPMIF
SCHEMBL5439345 0.85 APP (0.39) LMNATYRAPPMIFSTAT3
Styrene SCHEMBL7711595 0.84 CYP3A4 (0.41) TYRAPPMIFSTAT3ALDH1A1
SCHEMBL3838392 0.84 ELANE (0.46) LMNATYRAPPMIFSTAT3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed